2SK3830 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK3830
Código: K3830
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 85 W
Voltaje máximo drenador - fuente |Vds|: 60 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 72 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Voltaje de corte de la puerta |Vgs(off)|: 1.2 V
Carga de la puerta (Qg): 67 nC
Tiempo de subida (tr): 270 nS
Conductancia de drenaje-sustrato (Cd): 500 pF
Resistencia entre drenaje y fuente RDS(on): 0.016 Ohm
Paquete / Cubierta: TO3PB
Búsqueda de reemplazo de MOSFET 2SK3830
2SK3830 Datasheet (PDF)
2sk3830.pdf
Ordering number : ENN8032 2SK3830N-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK3830ApplicationsFeatures Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC Converter. Avalanche resistance guarantee.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS
2sk3830.pdf
isc N-Channel MOSFET Transistor 2SK3830FEATURESDrain Current : I = 72A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 16m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d
2sk3834.pdf
Ordering number : ENN8017 2SK3834N-Channel Silicon MOSFET2SK3834 General-Purpose Switching DeviceApplicationsFeatures Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC Converter. Avalanche resistance guarantee.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS
2sk3831.pdf
Ordering number : ENN8028 2SK3831N-Channel Silicon MOSFET2SK3831 General-Purpose Switching DeviceApplicationsFeatures Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC Converter. Avalanche resistance guarantee.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS
2sk3836.pdf
Ordering number : EN8638 2SK3836N-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK3836ApplicationsFeatures Ultrahigh-speed switching. 4V drive. Avalanche resistance guarantee.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 100 VGate-to-Source Voltage VGSS 20 VDrain Current (DC)
2sk3833.pdf
Ordering number : ENN8016 2SK3833N-Channel Silicon MOSFET2SK3833 General-Purpose Switching DeviceApplicationsFeatures Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC Converter. Avalanche resistance guarantee.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS
2sk3832.pdf
Ordering number : ENN8015 2SK3832N-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK3832ApplicationsFeatures Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC Converter. Avalanche resistance guarantee.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS
2sk3835.pdf
Ordering number : EN8637 2SK3835N-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK3835ApplicationsFeatures Ultrahigh-speed switching. 4V drive. Avalanche resistance guarantee.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 60 VGate-to-Source Voltage VGSS 20 VDrain Current (DC)
2sk3836.pdf
isc N-Channel MOSFET Transistor 2SK3836FEATURESDrain Current : I = 33A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 34m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
2sk3834.pdf
isc N-Channel MOSFET Transistor 2SK3834FEATURESDrain Current : I = 60A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 26m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
2sk3833.pdf
isc N-Channel MOSFET Transistor 2SK3833FEATURESDrain Current : I = 48A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 34m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
2sk3831.pdf
isc N-Channel MOSFET Transistor 2SK3831FEATURESDrain Current : I = 85A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 13m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d
2sk3832.pdf
isc N-Channel MOSFET Transistor 2SK3832FEATURESDrain Current : I = 30A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 60m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
2sk3835.pdf
isc N-Channel MOSFET Transistor 2SK3835FEATURESDrain Current : I = 50A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 15m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d
Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRFP250N , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
Liste
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