2SK4193LS MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK4193LS
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 28 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 450 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua
de drenaje: 4.3 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 26 nS
Cossⓘ - Capacitancia de salida: 60 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.95 Ohm
Encapsulados: TO220FI
Búsqueda de reemplazo de 2SK4193LS MOSFET
- Selecciónⓘ de transistores por parámetros
2SK4193LS datasheet
..1. Size:270K sanyo
2sk4193ls.pdf 
2SK4193LS Ordering number ENA1371 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK4193LS Applications Features Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Attachment workability is good by Mica-less package. Avalanche resistance guarantee. Specifications
..2. Size:280K inchange semiconductor
2sk4193ls.pdf
isc N-Channel MOSFET Transistor 2SK4193LS FEATURES Drain Current I = 4.5A@ T =25 D C Drain Source Voltage V = 450V(Min) DSS Static Drain-Source On-Resistance R = 1.95 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sol
8.1. Size:55K sanyo
2sk4195ls.pdf
Ordering number ENA1232 2SK4195LS SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK4195LS Applications Features Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Attachment workability is good by Mica-less package. Avalanche resistance guarantee. Specifications
8.2. Size:271K sanyo
2sk4194ls.pdf
2SK4194LS Ordering number ENA1372 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK4194LS Applications Features Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Attachment workability is good by Mica-less package. Avalanche resistance guarantee. Specifications
8.3. Size:159K sanyo
2sk4198ls.pdf
2SK4198LS Ordering number ENA1171A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK4198LS Applications Features ON-resistance RDS(on)=1.8 (typ.) Input capacitance Ciss=360pF(typ.) 10V drive Repetitive avalanche guarantee Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Uni
8.4. Size:68K sanyo
2sk4197ls.pdf
Ordering number ENA1223 2SK4197LS SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK4197LS Applications Features Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Attachment workability is good by Mica-less package. Avalanche resistance guarantee. Specifications
8.5. Size:267K sanyo
2sk4197fs.pdf
2SK4197FS Ordering number ENA1368A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK4197FS Applications Features High-speed switching. Avalanche resistance guarantee. 10V drive. Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 600 V Gate-to-Source
8.6. Size:271K sanyo
2sk4192ls.pdf
2SK4192LS Ordering number ENA1413 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK4192LS Applications Features Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Attachment workability is good by Mica-less package. Avalanche resistance guarantee. Specifications
8.7. Size:58K sanyo
2sk4191ls.pdf
Ordering number ENA1206 2SK41911LS SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK4191LS Applications Features Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Attachment workability is good by Mica-less package. Avalanche resistance guarantee. Specifications
8.8. Size:66K sanyo
2sk4196ls.pdf
Ordering number ENA1233 2SK4196LS SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK4196LS Applications Features Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Attachment workability is good by Mica-less package. Avalanche resistance guarantee. Specifications
8.9. Size:269K sanyo
2sk4199ls.pdf
2SK4199LS Ordering number ENA1332 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK4199LS Applications Features Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Attachment workability is good by Mica-less package. Avalanche resistance guarantee. Specifications
8.10. Size:267K sanyo
2sk4198fs.pdf
2SK4198FS Ordering number ENA1370B SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK4198FS Applications Features ON-resistance RDS(on)=1.8 (typ.) Input capacitance Ciss=360pF (typ.) 10V drive Repetitive avalanche guarantee Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Un
8.11. Size:324K sanyo
2sk4198fg.pdf
2SK4198FG Ordering number ENA1369A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK4198FG Applications Features ON-resistance RDS(on)=1.8 (typ.) Input capacitance Ciss=360pF (typ.) 10V drive Repetitive avalanche guarantee Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Un
8.12. Size:321K sanyo
2sk4197fg.pdf
2SK4197FG Ordering number ENA1367 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK4197FG Applications Features Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Attachment workability is good by Mica-less package. Avalanche resistance guarantee. Specifications
8.13. Size:279K inchange semiconductor
2sk4195ls.pdf
isc N-Channel MOSFET Transistor 2SK4195LS FEATURES Drain Current I = 4.0A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 2.34 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sol
8.14. Size:279K inchange semiconductor
2sk4194ls.pdf
isc N-Channel MOSFET Transistor 2SK4194LS FEATURES Drain Current I = 6.0A@ T =25 D C Drain Source Voltage V = 450V(Min) DSS Static Drain-Source On-Resistance R = 1.3 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sole
8.15. Size:280K inchange semiconductor
2sk4198ls.pdf
isc N-Channel MOSFET Transistor 2SK4198LS FEATURES Drain Current I = 5.0A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 2.34 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sol
8.16. Size:279K inchange semiconductor
2sk4197ls.pdf
isc N-Channel MOSFET Transistor 2SK4197LS FEATURES Drain Current I = 3.5A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 3.25 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sol
8.17. Size:278K inchange semiconductor
2sk4192ls.pdf
isc N-Channel MOSFET Transistor 2SK4192LS FEATURES Drain Current I = 7.0A@ T =25 D C Drain Source Voltage V = 400V(Min) DSS Static Drain-Source On-Resistance R = 1.04 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sol
8.18. Size:279K inchange semiconductor
2sk4191ls.pdf
isc N-Channel MOSFET Transistor 2SK4191LS FEATURES Drain Current I = 5.0A@ T =25 D C Drain Source Voltage V = 400V(Min) DSS Static Drain-Source On-Resistance R = 1.56 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sol
8.19. Size:280K inchange semiconductor
2sk4196ls.pdf
isc N-Channel MOSFET Transistor 2SK4196LS FEATURES Drain Current I = 5.0A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 1.56 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sol
8.20. Size:280K inchange semiconductor
2sk4199ls.pdf
isc N-Channel MOSFET Transistor 2SK4199LS FEATURES Drain Current I = 3.0A@ T =25 D C Drain Source Voltage V = 650V(Min) DSS Static Drain-Source On-Resistance R = 3.9 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sole
Otros transistores... 2SK3832
, 2SK3833
, 2SK3835
, 2SK3836
, 2SK4094
, 2SK4171
, 2SK4191LS
, 2SK4192LS
, AO3400
, 2SK4194LS
, 2SK4195LS
, 2SK4197FG
, 2SK4197FS
, 2SK4198FG
, 2SK4198FS
, 2SK4199LS
, 3LN01SS
.
History: SPN3400S23RG
| RSQ035P03
