3LP01SS Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 3LP01SS  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.15 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 10 V

|Id|ⓘ - Corriente continua de drenaje: 0.1 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 55 nS

Cossⓘ - Capacitancia de salida: 5.7 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 10.4 Ohm

Encapsulados: SSFP

  📄📄 Copiar 

 Búsqueda de reemplazo de 3LP01SS MOSFET

- Selecciónⓘ de transistores por parámetros

 

3LP01SS datasheet

 ..1. Size:250K  sanyo
 3lp01ss.pdf pdf_icon

3LP01SS

Ordering number EN6648A 3LP01SS SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device 3LP01SS Applications Features Low ON-resistance. High-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --30 V Gate-to-Source Voltage VGSS 10

 8.1. Size:28K  sanyo
 3lp01sp.pdf pdf_icon

3LP01SS

Ordering number ENN6647 3LP01SP P-Channel Silicon MOSFET 3LP01SP Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-resistance. unit mm Ultrahigh-speed switching. 2180 2.5V drive. [3LP01SP] 2.2 4.0 0.4 0.5 0.4 0.4 1 2 3 1.3 1.3 1 Source 2 Drain 3 Gate Specifications 3.0 3.8nom SANYO SPA Absolute Maximum Ratings at Ta=25 C P

 8.2. Size:48K  sanyo
 3lp01s.pdf pdf_icon

3LP01SS

Ordering number EN6681A 3LP01S SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device 3LP01S Applications Features Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --30 V Gate-to-Source Voltage VGSS

 8.3. Size:310K  cystek
 mtp3lp01s3.pdf pdf_icon

3LP01SS

Spec. No. 794N3 Issued Date 2011.03.14 CYStech Electronics Corp. Revised Date 2013.09.09 Page No. 1/ 9 30V P-CHANNEL Enhancement Mode MOSFET BVDSS -30V ID -230mA MTP3LP01S3 3 @-4V 4.6 @-2.5V RDSON(typ) 10.9 @-1.5V Features Ultra high speed switching. Low gate charge. 2.5V drive. Pb-free package. Equivalent Circuit Outline MTP3

MOSTRAR MÁS

Otros transistores... 2SK4194LS, 2SK4195LS, 2SK4197FG, 2SK4197FS, 2SK4198FG, 2SK4198FS, 2SK4199LS, 3LN01SS, 7N65, 5LN01S, 5LP01C, 5LP01S, 5LP01SP, 5LP01SS, BBL4001, BMS3003, BMS3004