BUZ901P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BUZ901P
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 125 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 200 V
|Id|ⓘ - Corriente continua de drenaje: 8 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(off)|ⓘ - Voltaje de corte de la puerta: 0.15 V
Cossⓘ - Capacitancia de salida: 500 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.4 Ohm
Paquete / Cubierta: TO247
Búsqueda de reemplazo de MOSFET BUZ901P
BUZ901P Datasheet (PDF)
buz900p buz901p.pdf
BUZ900PMAGNABUZ901PTECMECHANICAL DATADimensions in mm (inches) NCHANNELPOWER MOSFET4.69 (0.185) 15.49 (0.610)5.31 (0.209) 16.26 (0.640)1.49 (0.059)2.49 (0.098)POWER MOSFETS FOR AUDIO APPLICATIONS3.55 (0.140)3.81 (0.150)FEATURES1 2 3 HIGH SPEED SWITCHING1.65 (0.065)2.13 (0.084)0.40 (0.016) NCHANNEL POWER MOSFET0.79 (0.031) 2.87 (0.113)3.1
buz900dp buz901dp.pdf
BUZ900DPMAGNABUZ901DPTECMECHANICAL DATADimensions in mm NCHANNELPOWER MOSFET20.0 5.03.3 Dia.POWER MOSFETS FOR AUDIO APPLICATIONSFEATURES1 2 3 HIGH SPEED SWITCHING2.0 1.0 NCHANNEL POWER MOSFET2.0 SEMEFAB DESIGNED AND DIFFUSED3.4 HIGH VOLTAGE (160V & 200V) HIGH ENERGY RATING0.61.2 ENHANCEMENT MODE2.8 INTEGRAL PROTECTION D
buz900 buz901.pdf
BUZ900www.DataSheet4U.comMAGNABUZ901TECMECHANICAL DATADimensions in mm NCHANNELPOWER MOSFET+0.125.0 -0.158.7 Max.10.90 0.11.50 11.60POWER MOSFETS FOR Typ. 0.3AUDIO APPLICATIONSFEATURES1 2 HIGH SPEED SWITCHING NCHANNEL POWER MOSFET SEMEFAB DESIGNED AND DIFFUSED HIGH VOLTAGE (160V & 200V)R 4.0 0.1 R 4.4 0.2 HIGH ENERGY
buz900x4s buz901x4s.pdf
BUZ900X4SMAGNABUZ901X4S TECNEW PRODUCT UNDER DEVELOPMENTMECHANICAL DATADimensions in mm (inches) NCHANNELPOWER MOSFET11.8 (0.463)12.2 (0.480)31.5 (1.240)31.7 (1.248)POWER MOSFETS FOR 8.9 (0.350)7.8 (0.307)4.1 (0.161 )8.2 (0.322) W = 9.6 (0.378)Hex Nut M 44.3 (0.169 )(4 places) AUDIO APPLICATIONS4.8 (0.187)H =4.9 (0.193)1 2(4 places)R4.0 (0.
buz900d buz901d.pdf
BUZ900DMAGNABUZ901DTECMECHANICAL DATADimensions in mm NCHANNELPOWER MOSFET+0.125.0 -0.158.7 Max.10.90 0.11.50 11.60POWER MOSFETS FOR Typ. 0.3AUDIO APPLICATIONSFEATURES1 2 HIGH SPEED SWITCHING NCHANNEL POWER MOSFET SEMEFAB DESIGNED AND DIFFUSED HIGH VOLTAGE (160V & 200V)R 4.0 0.1 R 4.4 0.2 HIGH ENERGY RATING ENHANC
buz901d.pdf
isc N-Channel MOSFET Transistor BUZ901DFEATURESDrain Current: I = 16A@ T =25D CDrain Source Voltage-: V = 200V(Min)DSS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PA
Otros transistores... BUZ900 , BUZ900D , BUZ900DP , BUZ900P , BUZ900X4S , BUZ901 , BUZ901D , BUZ901DP , K2611 , BUZ901X4S , BUZ902 , BUZ902D , BUZ902DP , BUZ902P , BUZ903 , BUZ903D , BUZ903DP .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918