CPH3350 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CPH3350
Código: WG
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 1 W
Voltaje máximo drenador - fuente |Vds|: 20 V
Voltaje máximo fuente - puerta |Vgs|: 10 V
Corriente continua de drenaje |Id|: 3 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Voltaje de corte de la puerta |Vgs(off)|: 0.4 V
Carga de la puerta (Qg): 4.6 nC
Tiempo de subida (tr): 26 nS
Conductancia de drenaje-sustrato (Cd): 77 pF
Resistencia entre drenaje y fuente RDS(on): 0.083 Ohm
Paquete / Cubierta: SOT23 CPH3
Búsqueda de reemplazo de MOSFET CPH3350
CPH3350 Datasheet (PDF)
cph3350.pdf
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cph3356.pdf
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cph3355.pdf
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cph3351.pdf
CPH3351Ordering number : ENA1880SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceCPH3351ApplicationsFeatures ON-resistance RDS(on)1=190m (typ.) 4V drive Halogen free complianceSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --60 VGate-to-Sou
cph3351.pdf
CPH3351 Power MOSFET www.onsemi.com -60V, 250m, -1.8A, Single P-ChannelVDSS RDS(on) Max ID MaxFeatures 250m@ -10V Low On-Resistance -60V 330m@ -4.5V -1.8A 4V Drive 350m@ -4V ESD Diode-Protected Gate Pb-Free, Halogen Free and RoHS Compliance Electrical Connection Specifications P-Channel Absolute Maximum Ratings at Ta = 25C 3Param
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