CPH6355 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: CPH6355
   Código: XF
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.6 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(off)|ⓘ - Voltaje de corte de la puerta: 1.2 V
   Qgⓘ - Carga de la puerta: 3.9 nC
   trⓘ - Tiempo de subida: 6.6 nS
   Cossⓘ - Capacitancia de salida: 51 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.169 Ohm
   Paquete / Cubierta: SOT26 CPH6

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CPH6355 Datasheet (PDF)

..1. Size:401K sanyo
cph6355.pdf

CPH6355Ordering number : EN8933SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceCPH6355ApplicationsFeatures ON-resistance RDS(on)1=130m (typ.) 4V drive Halogen free complianceSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --30 VGate-to-Sour

8.1. Size:410K 1
cph6354.pdf

CPH6354Ordering number : ENA1946SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceCPH6354ApplicationsFeatures ON-resistance RDS(on)1=77m (typ.) 4V drive Halogen free compliance Protection diode inSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VD

8.2. Size:29K sanyo
cph6351.pdf

Ordering number : ENN6936CPH6351P-Channel Silicon MOSFETCPH6351Ultrahigh-Speed Switching ApplicationsPreliminaryFeatures Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2151A 2.5V drive.[CPH6351]0.152.956 40.051 : Drain2 : Drain1 2 33 : Gate0.954 : Source5 : Drain6 : DrainSpecifications0.4 SANYO : CPH6Absolu

8.3. Size:29K sanyo
cph6352.pdf

Ordering number : ENN6937CPH6352P-Channel Silicon MOSFETCPH6352Ultrahigh-Speed Switching ApplicationsPreliminaryFeatures Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2151A 2.5V drive.[CPH6352]0.152.96 5 40.051 2 30.951 : Drain2 : Drain3 : Gate4 : Source5 : Drain0.46 : DrainSpecificationsSANYO : CPH6Absolu

8.4. Size:287K sanyo
cph6350.pdf

CPH6350Ordering number : ENA1529SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceCPH6350ApplicationsFeatures 4V drive. Low ON-resistance.Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --30 VGate-to-Source Voltage VGSS 20 VDrain Current (DC) ID --

8.5. Size:293K onsemi
cph6350.pdf

Ordering number : ENA1529BCPH6350P-Channel Power MOSFEThttp://onsemi.com 30V, 6A, 43m , Single CPH6Features 4V drive Low ON-resistance Protection diode inSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain to Source Voltage VDSS --30 VGate to Source Voltage VGSS 20 VDrain Current (DC) ID --6 ADrain

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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