ECH8656 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: ECH8656
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.3 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 10 V
   |Id|ⓘ - Corriente continua de drenaje: 7.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 120 nS
   Cossⓘ - Capacitancia de salida: 180 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.017 Ohm
   Paquete / Cubierta: ECH8

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ECH8656 Datasheet (PDF)

..1. Size:382K sanyo
ech8656.pdf

ECH8656Ordering number : EN9010SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceECH8656ApplicationsFeatures ON-resistance RDS(on)1=13m (typ.) 1.8V drive Halogen free compliance Nch + Nch MOSFET Protection diode inSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings Unit

8.1. Size:66K sanyo
ech8654.pdf

Ordering number : ENA0981ECH8654SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceECH8654ApplicationsFeatures Low ON-resistance. 1.8V drive. Halogen free compliance.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --20 VGate-to-Source Voltage VGSS

8.2. Size:409K sanyo
ech8659.pdf

ECH8659Ordering number : ENA1224ASANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceECH8659ApplicationsFeatures 4V drive Composite type, facilitating high-density mounting Halogen free compliance Protection diode inSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-So

8.3. Size:264K sanyo
ech8653.pdf

Ordering number : ENA0851 ECH8653SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceECH8653ApplicationsFeatures Low ON-resistance. 4V drive. Best suited for LiB charging and discharging switch. Common-drain type. Halogen free compliance.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ra

8.4. Size:63K sanyo
ech8651r.pdf

Ordering number : ENA1010 ECH8651RSANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceECH8651RApplicationsFeatures Low ON-resistance. Built-in gate protection resistor. 2.5V drive. Best suited for LiB charging and discharging switch. Common-drain type. Halogen free compliance.SpecificationsAbsolute Maximum Ratings

8.5. Size:64K sanyo
ech8655r.pdf

Ordering number : ENA1011 ECH8655RSANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceECH8655RApplicationsFeatures Low ON-resistance. Built-in gate protection resistor. 2.5V drive. Best suited for LiB charging and discharging switch. Common-drain type. Halogen free compliance.SpecificationsAbsolute Maximum Ratings

8.6. Size:345K sanyo
ech8657.pdf

ECH8657Ordering number : ENA1710ASANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceECH8657ApplicationsFeatures 4V drive Halogen free complianceSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 35 VGate-to-Source Voltage VGSS 20 VDrain Current (DC) ID

8.7. Size:68K sanyo
ech8652.pdf

Ordering number : ENA0935ECH8652SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceECH8652ApplicationsFeatures Low ON-resistance. 1.8V drive. Composite type, facilitating high-density mounting. Halogen free compliance.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-S

8.8. Size:313K onsemi
ech8651r.pdf

Ordering number : ENA1010AECH8651RN-Channel Power MOSFEThttp://onsemi.com24V, 10A, 14m , Dual ECH8Features Low ON-resistance Built-in gate protection resistor 2.5V drive Best suited for LiB charging and discharging switch Common-drain type Halogen free compliance Protection diode inSpecificationsAbsolute Maximum Ratings at Ta=25CParame

8.9. Size:310K onsemi
ech8657.pdf

Ordering number : ENA1710BECH8657N-Channel Power MOSFEThttp://onsemi.com35V, 4.5A, 59m , Dual ECH8Features 4V drive Halogen free compliance Protection diode inSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 35 VGate-to-Source Voltage VGSS 20 VDrain Current (DC) ID 4.5 ADrain Curre

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