ECH8671 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: ECH8671
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.3 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 12 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 10 V
|Id|ⓘ - Corriente continua de drenaje: 3.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 30 nS
Cossⓘ - Capacitancia de salida: 110 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.077 Ohm
Paquete / Cubierta: ECH8
Búsqueda de reemplazo de ECH8671 MOSFET
ECH8671 Datasheet (PDF)
ech8671.pdf

ECH8671Ordering number : ENA1456SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceECH8671ApplicationsFeatures 1.8V drive. Composite type, facilitating high-density mounting. Halogen free compliance.Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --1
ech8673.pdf

ECH8673Ordering number : ENA1892SANYO SemiconductorsDATA SHEETN-Channel and P-Channel Silicon MOSFETsGeneral-Purpose Switching DeviceECH8673ApplicationsFeatures ON-resistance Nch: RDS(on)1=65m (typ.), Pch: ON-resistance RDS(on)1=125m (typ.) 4V drive Halogen free compliance Nch+Pch MOSFETSpecifications at Ta=25CAbsolute Maximum RatingsParamet
ech8674.pdf

ECH8674Ordering number : ENA1436SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceECH8674ApplicationsFeatures 1.8V drive. Composite type, facilitating high-density mounting. Halogen free compliance.Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --1
ech8675.pdf

ECH8675Ordering number : ENA1437SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceECH8675ApplicationsFeatures 1.8V drive. Composite type, facilitating high-density mounting. Halogen free compliance.Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --2
Otros transistores... CPH3350 , CPH3356 , CPH3360 , CPH5617 , CPH6354 , CPH6355 , ECH8420 , ECH8656 , RFP50N06 , ECH8672 , ECH8674 , ECH8675 , EFC4612R , EFC4615R , EFC4618R-P , EMH2411R , FSS294 .
History: ME60N03AS | ME60P06T | 2N60L-T2Q-T | ME6968ED | AFP6993 | TSD16N25M | AFP6459
History: ME60N03AS | ME60P06T | 2N60L-T2Q-T | ME6968ED | AFP6993 | TSD16N25M | AFP6459



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