EFC4615R Todos los transistores

 

EFC4615R MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: EFC4615R
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.6 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 24 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 235 nS
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.031 Ohm
   Paquete / Cubierta: EFCP
     - Selección de transistores por parámetros

 

EFC4615R Datasheet (PDF)

 ..1. Size:332K  onsemi
efc4615r.pdf pdf_icon

EFC4615R

EFC4615ROrdering number : ENA1629SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceEFC4615RApplicationsFeatures 2.5V drive Best suited for LiB charging and discharging switch Common-drain typeSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitSource-to-Source Voltage VSSS 24 VGa

 7.1. Size:333K  sanyo
efc4615.pdf pdf_icon

EFC4615R

EFC4615ROrdering number : ENA1629SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceEFC4615RApplicationsFeatures 2.5V drive Best suited for LiB charging and discharging switch Common-drain typeSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitSource-to-Source Voltage VSSS 24 VGa

 8.1. Size:391K  1
efc4618r-p.pdf pdf_icon

EFC4615R

EFC4618R-POrdering number : ENA1123SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceEFC4618R-PApplicationsFeatures 2.5V drive Best suited for LiB charging and discharging switch Common-drain typeSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitSource-to-Source Voltage VSSS 24 V

 8.2. Size:266K  sanyo
efc4612r.pdf pdf_icon

EFC4615R

EFC4612ROrdering number : ENA1477ASANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceEFC4612RApplicationsFeatures 2.5V drive. Built-in gate protection resistor. Best suited for LiB charging and discharging switch. Common-drain type.Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: WMO15N12TS | CTM09N20 | SST176 | DMP2200UDW | SVF13N50PN | AOI418 | PSMN017-30EL

 

 
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