EFC4618R-P Todos los transistores

 

EFC4618R-P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: EFC4618R-P
   Código: FT
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.6 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 24 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   |Vgs(off)|ⓘ - Voltaje de corte de la puerta: 0.5 V
   Qgⓘ - Carga de la puerta: 25.4 nC
   trⓘ - Tiempo de subida: 815 nS
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.023 Ohm
   Paquete / Cubierta: EFCP

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EFC4618R-P Datasheet (PDF)

 ..1. Size:391K  1
efc4618r-p.pdf

EFC4618R-P
EFC4618R-P

EFC4618R-POrdering number : ENA1123SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceEFC4618R-PApplicationsFeatures 2.5V drive Best suited for LiB charging and discharging switch Common-drain typeSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitSource-to-Source Voltage VSSS 24 V

 6.1. Size:391K  sanyo
efc4618r.pdf

EFC4618R-P
EFC4618R-P

EFC4618ROrdering number : ENA1881SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceEFC4618RApplicationsFeatures 2.5V drive Best suited for LiB charging and discharging switch Common-drain typeSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitSource-to-Source Voltage VSSS 24 VGa

 8.1. Size:266K  sanyo
efc4612r.pdf

EFC4618R-P
EFC4618R-P

EFC4612ROrdering number : ENA1477ASANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceEFC4612RApplicationsFeatures 2.5V drive. Built-in gate protection resistor. Best suited for LiB charging and discharging switch. Common-drain type.Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings

 8.2. Size:333K  sanyo
efc4615.pdf

EFC4618R-P
EFC4618R-P

EFC4615ROrdering number : ENA1629SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceEFC4615RApplicationsFeatures 2.5V drive Best suited for LiB charging and discharging switch Common-drain typeSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitSource-to-Source Voltage VSSS 24 VGa

 8.3. Size:332K  onsemi
efc4615r.pdf

EFC4618R-P
EFC4618R-P

EFC4615ROrdering number : ENA1629SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceEFC4615RApplicationsFeatures 2.5V drive Best suited for LiB charging and discharging switch Common-drain typeSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitSource-to-Source Voltage VSSS 24 VGa

 8.4. Size:279K  onsemi
efc4619r.pdf

EFC4618R-P
EFC4618R-P

Ordering number : ENA2179A EFC4619R Power MOSFET http://onsemi.com 24V, 6A, 23m N-Channel Dual EFCP Features 2.5V drive Protection diode in Common-drain type Halogen free compliance 2KV ESD HBM Applications Lithium-ion battery charging and discharging switch Specifications Absolute Maximum Ratings at Ta = 25C Parameter Symbol Conditions Ra

Otros transistores... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

History: BUK9Y19-55B | CS13N15D

 

 
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History: BUK9Y19-55B | CS13N15D

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