EMH2411R Todos los transistores

 

EMH2411R MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: EMH2411R

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 1.3 W

Tensión drenaje-fuente (Vds): 30 V

Tensión compuerta-fuente (Vgs): 12 V

Corriente continua de drenaje (Id): 5 A

CARACTERÍSTICAS ELÉCTRICAS

Resistencia drenaje-fuente RDS(on): 0.0365 Ohm

Empaquetado / Estuche: EMH8

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EMH2411R Datasheet (PDF)

1.1. emh2411r.pdf Size:270K _sanyo

EMH2411R
EMH2411R

EMH2411R Ordering number : ENA1421 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device EMH2411R Applications Features Low ON-resistance. Best suited for LiB charging and discharging switch. Common-drain type. 2.5V drive. Halogen free compliance. Specifications at Ta=25C Absolute Maximum Ratings Parameter Symbol Conditions Ratings U

4.1. emh2412.pdf Size:481K _sanyo

EMH2411R
EMH2411R

EMH2412 Ordering number : ENA1315 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device EMH2412 Applications Features Low ON-resistance. Best suited for LiB charging and discharging switch. Common-drain type. 2.5V drive. Halogen free compliance. Specifications at Ta=25C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Uni

 5.1. pemh24 pumh24.pdf Size:57K _update

EMH2411R
EMH2411R

PEMH24; PUMH24 NPN/NPN resistor-equipped transistors; R1 = 100 kΩ, R2 = 100 kΩ Rev. 04 — 18 May 2005 Product data sheet 1. Product profile 1.1 General description NPN/NPN Resistor-Equipped Transistors (RET). Table 1: Product overview Type number Package NPN/PNP PNP/PNP complement complement Philips JEITA PEMH24 SOT666 - PEMD24 PEMB24 PUMH24 SOT363 SC-88 PUMD24 PUMB24 1.2 Feat

5.2. emh2407.pdf Size:306K _sanyo

EMH2411R
EMH2411R

Ordering number : ENA1141B EMH2407 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device EMH2407 Applications Features Low ON-resistance. Best suited for LiB charging and discharging switch. Common-drain type. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDS

 5.3. emh2409.pdf Size:346K _sanyo

EMH2411R
EMH2411R

EMH2409 Ordering number : ENA1890 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device EMH2409 Applications Features The EMH2409 incorporates a N-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching, thereby enabling high-density mounting 4V drive Halogen free compliance Specifications at Ta=25C Absolute Maximum Ra

5.4. emh2408.pdf Size:307K _sanyo

EMH2411R
EMH2411R

Ordering number : ENA1170 EMH2408 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device EMH2408 Applications Features The EMH2402 incorporates an N-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching, thereby enabling high-density mounting. 1.8V drive. Halogen free cpmpliance. Specifications Absolute Maximum Ratings at

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