MCH3474 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MCH3474
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 4 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 41 nS
Cossⓘ - Capacitancia de salida: 59 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.05 Ohm
Búsqueda de reemplazo de MCH3474 MOSFET
- Selecciónⓘ de transistores por parámetros
MCH3474 datasheet
mch3474.pdf
MCH3474 Ordering number ENA1397 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device MCH3474 Applications Features Low ON-resistance. Ultrahigh speed switching. 1.8V drive. Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS
mch3474.pdf
MCH3474 Power MOSFET 30V, 50m , 4A, Single N-Channel This Power MOSFET is produced using ON Semiconductor s trench technology, which is specifically designed to minimize gate charge and low www.onsemi.com on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements. Features Low On-Resistance VDSS RDS(on) Max ID
mch3476.pdf
MCH3476 Ordering number ENA1952 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device MCH3476 Applications Features 1.8V drive Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 20 V Gate-to-Source Voltage VGSS 12 V Drain Current (DC) ID
mch3477.pdf
Ordering number ENA1260 MCH3477 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET MCH3477 General-Purpose Switching Device Applications Features Ultrahigh-speed switching. 1.8V drive. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 20 V Gate-to-Source Voltage VGSS 12 V Drain Current (DC) I
Otros transistores... EFC4615R , EFC4618R-P , EMH2411R , FSS294 , FTS2057 , FW216A , MCH3375 , MCH3376 , AO4407 , MCH3476 , MCH3478 , MCH3479 , MCH6448 , MCH6603 , SCH1333 , SCH1343 , SFT1345 .
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AUB034N10 | AUB033N08BG | AUB026N085 | AUA062N08BG | AUA060N08AG | AUA056N08BGL | AUA039N10 | ASW80R290E | ASW65R120EFD | ASW65R110E | ASW65R095EFD | ASW65R046EFD | ASW65R041EFDA | ASW65R041E | ASW60R150E | ASW60R090EFDA
Popular searches
2sc2705 | bc239 | 2sc3264 | mp38a | bc546 transistor | bd243 | 2sk170 datasheet | 2n7000 equivalent
