MCH3474 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MCH3474
Código: FF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 4 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(off)|ⓘ - Voltaje de corte de la puerta: 0.4 V
Qgⓘ - Carga de la puerta: 4.7 nC
trⓘ - Tiempo de subida: 41 nS
Cossⓘ - Capacitancia de salida: 59 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.05 Ohm
Paquete / Cubierta: SOT323 MCPH3
Búsqueda de reemplazo de MOSFET MCH3474
MCH3474 Datasheet (PDF)
mch3474.pdf
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mch3474.pdf
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mch3476.pdf
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mch3477.pdf
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mch3475.pdf
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mch3479.pdf
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mch3478.pdf
MCH3478Ordering number : ENA1353SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceMCH3478ApplicationsFeatures Low ON-resistance. Ultrahigh speed switching. 1.8V drive. Halogen free compliance.Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 30 V
mch3477.pdf
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