MCH3476 Todos los transistores

 

MCH3476 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MCH3476
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.8 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 11 nS
   Cossⓘ - Capacitancia de salida: 28 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.125 Ohm
   Paquete / Cubierta: SOT323 MCPH3
     - Selección de transistores por parámetros

 

MCH3476 Datasheet (PDF)

 ..1. Size:375K  1
mch3476.pdf pdf_icon

MCH3476

MCH3476Ordering number : ENA1952SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceMCH3476ApplicationsFeatures 1.8V drive Halogen free complianceSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 20 VGate-to-Source Voltage VGSS 12 VDrain Current (DC) ID

 ..2. Size:611K  onsemi
mch3476.pdf pdf_icon

MCH3476

MCH3476 Power MOSFET www.onsemi.com 20V, 125m, 2A, Single N-ChannelFeatures VDSS RDS(on) Max ID Max Low On-Resistance 125m@ 4.5V 1.8V Drive 20V 190m@ 2.5V 2A ESD Diode-Protected Gate 310m@ 1.8V Pb-Free, Halogen Free and RoHS Compliance Specifications Electrical Connection N-Channel Absolute Maximum Ratings at Ta = 25C Unit Parameter Sym

 8.1. Size:64K  sanyo
mch3477.pdf pdf_icon

MCH3476

Ordering number : ENA1260 MCH3477SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETMCH3477 General-Purpose Switching DeviceApplicationsFeatures Ultrahigh-speed switching. 1.8V drive.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 20 VGate-to-Source Voltage VGSS 12 VDrain Current (DC) I

 8.2. Size:63K  sanyo
mch3475.pdf pdf_icon

MCH3476

Ordering number : ENA1000 MCH3475SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETMCH3475 General-Purpose Switching DeviceApplicationsFeatures Ultrahigh-speed switching. 4V drive.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 30 VGate-to-Source Voltage VGSS 20 VDrain Current (DC) ID

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: AP40N03GJ-HF | P1160JD | MT3245 | FC4B22180L | FQPF65N06 | AUIRF1010EZL | NCEP40P60Q

 

 
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