2SK715 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2SK715
   Tipo de FET: JFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.3 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 15 V
   |Id|ⓘ - Corriente continua de drenaje: 0.05 A
   Tjⓘ - Temperatura máxima de unión: 125 °C

CARACTERÍSTICAS ELÉCTRICAS

Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 40 Ohm
Paquete / Cubierta: SPA

Búsqueda de reemplazo de MOSFET 2SK715

2SK715 Datasheet (PDF)

..1. Size:90K sanyo
2sk715.pdf

Ordering number:EN2543N-Channel Junction Silicon FET2SK715AM Tuner, RF Amplifier ApplicationsApplications Package Dimensions AM tuner RF amp, low-noise amp.unit:mm HF low-noise amp.2034A[2SK715]2.24.0Features Adoption of FBET process. Large yfs .0.40.5 Small Ciss. Very low noise figure.0.40.41 2 31 : Source1.3 1.32 : Gate

0.1. Size:705K onsemi
2sk715u-v-w.pdf

2SK715N-Channel JFETwww.onsemi.com15V, 7.3 to 24mA, 50mSApplications AM Tuner RF Amp, Low-noise Amp HF Low-noise AmpFeaturesElectrical Connection Marking Adoption of FBET Process Large yfs 2 1 : Source K715 Small Ciss2 : GateLOT No. Very Low Noise Figure 3 : DrainSpecificationsAbsolute Maximum Ratings at Ta=25C 1 3Parameter Symbol

9.1. Size:523K toshiba
2sk711.pdf

2SK711 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK711 High Frequency Amplifier Applications Unit: mmAM High Frequency Amplifier Applications Audio Frequency Amplifier Applications High |Yfs|: |Yfs| = 25 mS (typ.) Low Ciss: Ciss = 7.5 pF (typ.) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitGate-drain voltage VGDS -2

9.2. Size:341K nec
2sk719.pdf

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

Liste

Recientemente añadidas las descripciónes de los transistores: