2SK715 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK715
Tipo de FET: JFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.3 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 15 V
|Id|ⓘ - Corriente continua de drenaje: 0.05 A
Tjⓘ - Temperatura máxima de unión: 125 °C
CARACTERÍSTICAS ELÉCTRICAS
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 40 Ohm
Encapsulados: SPA
Búsqueda de reemplazo de 2SK715 MOSFET
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2SK715 datasheet
2sk715.pdf
Ordering number EN2543 N-Channel Junction Silicon FET 2SK715 AM Tuner, RF Amplifier Applications Applications Package Dimensions AM tuner RF amp, low-noise amp. unit mm HF low-noise amp. 2034A [2SK715] 2.2 4.0 Features Adoption of FBET process. Large yfs . 0.4 0.5 Small Ciss. Very low noise figure. 0.4 0.4 1 2 3 1 Source 1.3 1.3 2 Gate
2sk715u-v-w.pdf
2SK715 N-Channel JFET www.onsemi.com 15V, 7.3 to 24mA, 50mS Applications AM Tuner RF Amp, Low-noise Amp HF Low-noise Amp Features Electrical Connection Marking Adoption of FBET Process Large yfs 2 1 Source K715 Small Ciss 2 Gate LOT No. Very Low Noise Figure 3 Drain Specifications Absolute Maximum Ratings at Ta=25 C 1 3 Parameter Symbol
2sk711.pdf
2SK711 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK711 High Frequency Amplifier Applications Unit mm AM High Frequency Amplifier Applications Audio Frequency Amplifier Applications High Yfs Yfs = 25 mS (typ.) Low Ciss Ciss = 7.5 pF (typ.) Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Gate-drain voltage VGDS -2
Otros transistores... MCH3478 , MCH3479 , MCH6448 , MCH6603 , SCH1333 , SCH1343 , SFT1345 , VEC2415 , AO3407 , CPH3910 , CPH6904 , MCH3914 , MCH5908 , TF408 , TF410 , 2SK2701A , 2SK2943 .
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