2SK3800 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2SK3800
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Máxima disipación de potencia (Pd): 80 W
   Voltaje máximo drenador - fuente |Vds|: 40 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 70 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
   Tiempo de subida (tr): 100 nS
   Conductancia de drenaje-sustrato (Cd): 1200 pF
   Resistencia entre drenaje y fuente RDS(on): 0.006 Ohm
   Paquete / Cubierta: TO220S

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2SK3800 Datasheet (PDF)

..1. Size:45K sanken-ele
2sk3800.pdf

MOS FET 2SK3800Absolute Maximum Ratings Electrical Characteristics External Dimensions TO220S(Ta=25C) (Ta=25C)Symbol Ratings Unit RatingsSymbol Test Conditions Unitmin typ maxV 40 VDSS4.440.2(5) 1.30.2V 20 V V I = 100A, V = 0V VGSS (BR) DSS D GS 40I 70 A I V = 15V 10 AD GSS GSV = 40V, V = 0V AI *1 140 A I DS GS 100D (pulse) DSS2.60.2

..2. Size:255K inchange semiconductor
2sk3800.pdf

isc N-Channel MOSFET Transistor 2SK3800FEATURESDrain Current I =70A@ T =25D CDrain Source Voltage-: V =40V(Min)DSSStatic Drain-Source On-Resistance: R = 6m(Max) 100% avalanche testedDS(on)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose app

8.1. Size:455K fuji
2sk3804-01s.pdf

2SK3804-01S FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Trench Power MOSFET Features Outline Drawings [mm] Equivalent circuit schematic High speed switching Low on-resistance Drain (D) No secondary breakdown Low driving power Avalanche-proof Applications Gate (G) Switching regulators Source (S) DC-DC converters General purpose power amplifier Abso

8.2. Size:45K sanken-ele
2sk3801.pdf

MOS FET 2SK3801Absolute Maximum Ratings Electrical Characteristics External Dimensions TO-3P(Ta=25C) (Ta=25C)Symbol Ratings Unit RatingsSymbol Test Conditions Unit 15.60.4min typ maxV 40 V 4.80.2DSS13.6V 20 V V I = 100A, V = 0VGSS (BR) DSS D GS 40 V9.6 2.00.1I 70 A I V = 15V 10 AD GSS GSAI *1 140 V = 40V, V = 0V 100D (pulse) A I DS GSD

8.3. Size:357K inchange semiconductor
2sk3804-01s.pdf

isc N-Channel MOSFET Transistor 2SK3804-01SFEATURESDrain Current : I = 70A@ T =25D CDrain Source Voltage: V = 75V(Min)DSSStatic Drain-Source On-Resistance: R = 8.5m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sol

8.4. Size:259K inchange semiconductor
2sk3801.pdf

isc N-Channel MOSFET Transistor 2SK3801FEATURESDrain Current I =70A@ T =25D CDrain Source Voltage-: V =40V(Min)DSSStatic Drain-Source On-Resistance: R = 6m(Max) 100% avalanche testedDS(on)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose app

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