2SK3801 Todos los transistores

 ..1. Size:45K  sanken-ele
 2sk3801.pdf

MOS FET 2SK3801 Absolute Maximum Ratings Electrical Characteristics External Dimensions TO-3P (Ta=25 C) (Ta=25 C) Symbol Ratings Unit Ratings Symbol Test Conditions Unit 15.6 0.4 min typ max V 40 V 4.8 0.2 DSS 13.6 V 20 V V I = 100 A, V = 0V GSS (BR) DSS D GS 40 V 9.6 2.0 0.1 I 70 A I V = 15V 10 A D GSS GS A I *1 140 V = 40V, V = 0V 100 D (pulse) A I DS GS D

 ..2. Size:259K  inchange semiconductor
 2sk3801.pdf

isc N-Channel MOSFET Transistor 2SK3801 FEATURES Drain Current I =70A@ T =25 D C Drain Source Voltage- V =40V(Min) DSS Static Drain-Source On-Resistance R = 6m (Max) 100% avalanche tested DS(on) Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose app

 8.1. Size:455K  fuji
 2sk3804-01s.pdf

2SK3804-01S FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Trench Power MOSFET Features Outline Drawings [mm] Equivalent circuit schematic High speed switching Low on-resistance Drain (D) No secondary breakdown Low driving power Avalanche-proof Applications Gate (G) Switching regulators Source (S) DC-DC converters General purpose power amplifier Abso

 8.2. Size:45K  sanken-ele
 2sk3800.pdf

MOS FET 2SK3800 Absolute Maximum Ratings Electrical Characteristics External Dimensions TO220S (Ta=25 C) (Ta=25 C) Symbol Ratings Unit Ratings Symbol Test Conditions Unit min typ max V 40 V DSS 4.44 0.2 (5) 1.3 0.2 V 20 V V I = 100 A, V = 0V V GSS (BR) DSS D GS 40 I 70 A I V = 15V 10 A D GSS GS V = 40V, V = 0V A I *1 140 A I DS GS 100 D (pulse) DSS 2.6 0.2

 8.3. Size:357K  inchange semiconductor
 2sk3804-01s.pdf

isc N-Channel MOSFET Transistor 2SK3804-01S FEATURES Drain Current I = 70A@ T =25 D C Drain Source Voltage V = 75V(Min) DSS Static Drain-Source On-Resistance R = 8.5m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sol

 8.4. Size:255K  inchange semiconductor
 2sk3800.pdf

isc N-Channel MOSFET Transistor 2SK3800 FEATURES Drain Current I =70A@ T =25 D C Drain Source Voltage- V =40V(Min) DSS Static Drain-Source On-Resistance R = 6m (Max) 100% avalanche tested DS(on) Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose app