2SK3019EB MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Data Sheet2.5V Drive Nch MOSFET 2SK3019EB Structure Dimensions (Unit : mm)Silicon N-channel MOSFET EMT3F(3)Features1) High-speed switching.(1) (2)2) Low voltage drive(2.5V drive).3) Drive circuits can be simple.4) Parallel use is easy.Abbreviated symbol : KN ApplicationSwitching Packaging specifications Inner circuit(3)Package TapingType

2SK3019 Transistor 2.5V Drive Nch MOS FET 2SK3019 Dimensions (Unit : mm) Structure Silicon N-channel EMT3MOSFET 1.6 0.70.550.3( )3 Applications ( ) ( )2 1Interfacing, switching (30V, 100mA) 0.2 0.20.150.5 0.51.0(1)Source Features (2)Gate1) Low on-resistance. (3)Drain Abbreviated symbol : KN2) Fast switching speed. 3) Low voltage drive (2.5

2SK3019AFeatures Low ON-Resistance Fast Switching Speed Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 N-Channel Halogen Free. Green Device (Note 1)MOSFET Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) Maximum Ratings Operating Junction Temperature Range : -55C to +150C

2SK3019Features Low ON-Resistance Fast Switching Speed Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 N-Channel Halogen Free Available Upon Request By Adding Suffix "-HF"MOSFET Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSCompliant. See Ordering Information)Maximum Ratings Operating Junction Temperature Range : -55

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-523 Plastic-Encapsulate MOSFETS 2SK3019 N-channel MOSFETID V(BR)DSS RDS(on)MAX SOT-523 8@4V30V100mA13@2.5V1. GATE2. SOURCE3. DRAINFEATURE APPLICATION Low on-resistance Interfacing , Switching Fast switching speed Low voltage drive makes this device ideal for Portable equipment Easily des

2SK3019TN-Channel MOSFET3P b Lead(Pb)-Free12 1. GATEFEATURES:2. SOURCE* Low on-resistance3. DRAIN* Fast switching speed* Low voltage drive makes this device ideal for portable equipmentSOT-523(SC-75)* Easily designed drive circuits* Easy to parallelMaximum Ratings (TA=25Cunless otherwise specified)Characteristic Symbol Values UnitDrain-Source Voltage VDSS 3

FM120-M WILLASTHRU2SK3019TT1SOT-523 Plastic-Encapsulate MOSFETSFM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProductPackage outline N-channel MOSFET FeaturesFEATURES Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low on-resistance Low

Shenzhen Tuofeng Semiconductor Technology Co., Ltd 2SK3019 Transistor 2.5V Drive Nch MOS FET 2SK3019 External dimensions (Unit : mm) Structure Silicon N-channel EMT3MOSFET 1.6 0.70.550.3( )3 Applications ( ) ( )2 1Interfacing, switching (30V, 100mA) 0.2 0.20.150.5 0.51.0(1)Source Features (2)Gate1) Low on-resistance. (3)Drain Abbreviated sym

Spec. No. : C800C3 Issued Date : 2011.01.19 CYStech Electronics Corp.Revised Date : Page No. : 1/8 ESD protected N-Channel Enhancement Mode MOSFET BVDSS 30V2SK3019C3 ID 100mA 8 RDSON(MAX) Description Low voltage drive(2.5V drive) makes this device ideal for portable equipment. High speed switching ESD protected device Pb-free lead plating & ha

LESHAN RADIO COMPANY, LTD.Silicon N-Channel MOSFET L2SK3019LT1GApplications3Interfacing,switching(30V,100mA)1Features 2Low on-resistanceSOT 23 Fast switching speed Low voltage drive(2.5V) makes this ideal for portable equipmentEquivalent circuitDrive circuits can be simpleDrainParallel use is easywe declare that the material of product compliance with RoHS

SMD Type MOSFETN-Channel MOSFET2SK3019 Features Low on-resistance. Fast switching speed. Low voltage drive (2.5V) makes this Drain device ideal for portable equipment. Easily designed drive circuits.1 Gate Easy to parallel.Gate2 Source3 Drain GateProtectionSourceDiode Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Uni

2SK3019 N-channel MOSFET SOT-523 FEATURES 3 Low on-resistance 1 Fast switching speed 1. GATE Low voltage drive makes this device ideal for portable equipment 22. SOURCE Easily designed drive circuits 3. DRAIN Easy to parallel Marking: KN Equivalent circuit MOSFET MAXIMUM RATINGS (Ta = 25C unless otherwise noted) Units Symbol Parameter Value VDS D

TAK CHEONG SEMICONDUCTOR150mW SOT-523 SURFACE MOUNT Plastic Package Green Product N-Channel MOSFET 3 Absolute Maximum Ratings TA = 25C unless otherwise noted Symbol Parameter Value Units2 VDS Drain-Source Voltage 30 V 1. Gate VGS Continuous Gate-Source Voltage 20V V 2. Source 1 3. Drain ID Continuous Drain Current 100 mA SOT-523 PD Power Dissipation 1