2SK3541 Todos los transistores

 ..1. Size:78K  rohm
 2sk3541.pdf

2SK3541 Transistor 2.5V Drive Nch MOS FET 2SK3541 External dimensions (Unit mm) Structure Silicon N-channel VMT3 MOSFET 1.2 0.32 (3) Applications Interfacing, switching (30V, 100mA) (1)(2) 0.22 0.13 0.4 0.4 0.5 0.8 (1)Gate Features (2)Source (3)Drain Abbreviated symbol KN 1) Low on-resistance. 2) Fast switching speed. 3) Low voltage drive (2.5V) makes

 ..2. Size:1595K  jiangsu
 2sk3541.pdf

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-723 Plastic-Encapsulate MOSFETS 2SK3541 N-Channel MOSFET SOT-723 ID V(BR)DSS RDS(on)MAX 8 @4V 30V 100mA 13 @2.5V 1. GATE 2. SOURCE 3. DRAIN FEATURE APPLICATION Interfacing , Switching Low on-resistance Fast switching speed Low voltage drive makes this device ideal for Portable equipment Drive circu

 0.1. Size:72K  rohm
 2sk3541t2l.pdf

2SK3541 Transistor 2.5V Drive Nch MOS FET 2SK3541 External dimensions (Unit mm) Structure Silicon N-channel VMT3 MOSFET 1.2 0.32 (3) Applications Interfacing, switching (30V, 100mA) (1)(2) 0.22 0.13 0.4 0.4 0.5 0.8 (1)Gate Features (2)Source (3)Drain Abbreviated symbol KN 1) Low on-resistance. 2) Fast switching speed. 3) Low voltage drive (2.5V) makes

 0.2. Size:363K  wietron
 2sk3541m.pdf

2SK3541M Surface Mount N-Channel MOSFET P b Lead(Pb)-Free 3 1 1. Gate 2 2. Source Features 3. Drain Low on-resistance * Fast switching speed SOT-723 * Low voltage drive(2.5V) makes this ideal for portable eqipment u * Drive ircuits an e imple * 3 Drain Parallel se s asy * e eclare hat he aterial f roduct * ompliance ith RoHS equirements. * 1 Gate

 0.3. Size:446K  willas
 2sk3541m3t5.pdf

FM120-M WILLAS THRU FM1200-M 1.0A SURFACE MOUNT SCHOTTKY SOT-723 Plastic-Encapsulate MOSFETS BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Low profile surface mounted application in order to

 0.4. Size:344K  cystek
 2sk3541y3.pdf

Spec. No. C800Y3 Issued Date 2011.12.22 CYStech Electronics Corp. Revised Date Page No. 1/8 ESD protected N-Channel Enhancement Mode MOSFET BVDSS 30V 2SK3541Y3 ID 100mA 3.4 (TYP) RDSON@4V 6.9 (TYP) RDSON@2.5V Description Low voltage drive(2.5V drive) makes this device ideal for portable equipment. High speed switching ESD protected dev

 0.5. Size:116K  chenmko
 2sk3541vgp.pdf

CHENMKO ENTERPRISE CO.,LTD 2SK3541VGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 100 mAmpere APPLICATION * Interfacing, switching (30V, 100mA) FEATURE SOT-563 * Small surface mounting type. (SOT-563) * Low on-resistance * Fast switching speed * Easily designed drive circuits (1) * Easy to parallel (5) 0.50 0.9 1.1 1.5 1.7 0.50

 0.6. Size:123K  chenmko
 2sk3541gp.pdf

CHENMKO ENTERPRISE CO.,LTD 2SK3541GP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 100 mAmpere FEATURE * Small surface mounting type. (SOT-23) SOT-23 * Low on-resistance * Fast switching speed * Easily designed drive circuits * Easy to parallel (1) (3) CONSTRUCTION (2) Silicon N-Channel MOSFET ( ) ( ) .055 1.40 .028 0.70 ( ) ( ) .

 0.7. Size:174K  chenmko
 2sk3541sgp.pdf

CHENMKO ENTERPRISE CO.,LTD 2SK3541SGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 100 mAmpere APPLICATION * Interfacing, switching (30V, 100mA) FEATURE SC-88/SOT-363 * Small surface mounting type. (SC-88/SOT-363) * Low on-resistance * Fast switching speed * Easily designed drive circuits (1) (S1) (D1)(6) * Easy to parallel (G1) 0.6

 0.8. Size:149K  chenmko
 2sk3541mgp.pdf

CHENMKO ENTERPRISE CO.,LTD 2SK3541MGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 100 mAmpere APPLICATION * Interfacing, switching (30V, 100mA) FEATURE SOT-723 * Small surface mounting type. (SOT-723) * Low on-resistance * Fast switching speed * Easily designed drive circuits 0.17 0.27 * Easy to parallel (2) (3) 0.4 1.15 1.25 0.

 0.9. Size:2657K  cn tech public
 2sk3541-p.pdf