R6006AND MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Data Sheet10V Drive Nch MOSFET R6006AND Structure Dimensions (Unit : mm)Silicon N-channel MOSFETCPT36.5(SC-63)5.12.30.5Features1) Low on-resistance.2) High-speed switching.0.753) Wide SOA.(1) Gate 0.650.9 2.3(2) Drain (1) (2) (3)2.3 0.54) Drive circuits can be simple.(3) Source 1.05) Parallel use is easy. ApplicationSwitchi

R6006ANX Nch 600V 6A Power MOSFET DatasheetlOutlineVDSS600V TO-220FMRDS(on) (Max.)1.2WID6APD40W(1)(2)(3) lFeatures lInner circuit1) Low on-resistance.(1) Gate 2) Fast switching speed.(2) Drain 3) Gate-source voltage (VGSS) guaranteed to be 30V. (3) Source 4) Drive circuits can be simple.*1 Body Diode 5) Parallel use is easy.6) Pb-free lead plating

R6006JND3DatasheetNch 600V 6A Power MOSFETlOutlinel TO-252VDSS600VRDS(on)(Max.)0.936ID6APD86W lFeaturesllInner circuitl1) Fast reverse recovery time (trr)2) Low on-resistance3) Fast switching speed4) Drive circuits can be simple5) Pb-free plating ; RoHS compliantlApplicationllPac

R6006KNXDatasheetNch 600V 6A Power MOSFETlOutlinel TO-220FMVDSS 600VRDS(on)(Max.) 0.83ID 6APD 40W lFeaturesllInner circuitl1) Low on-resistance2) Ultra fast switching speed3) Parallel use is easy4) Pb-free plating ; RoHS compliantlApplicationllPackaging specificationslSwitching Packing

R6006JNJDatasheetNch 600V 6A Power MOSFETlOutlinel LPT(S)VDSS600VRDS(on)(Max.)0.936ID6APD86W lFeaturesllInner circuitl1) Fast reverse recovery time (trr)2) Low on-resistance3) Fast switching speed4) Drive circuits can be simple5) Pb-free plating ; RoHS compliantlApplicationllPack

R6006KND3DatasheetNch 600V 6A Power MOSFETlOutlinel TO-252VDSS 600VRDS(on)(Max.) 830mID 6APD 70W lFeaturesllInner circuitl1) Low on-resistance2) Ultra fast switching speed3) Parallel use is easy4) Pb-free plating ; RoHS compliantlApplicationllPackaging specificationslSwitching Packing

R6006JNXDatasheetNch 600V 6A Power MOSFETlOutlinel TO-220FMVDSS600VRDS(on)(Max.)0.936ID6APD43W lFeaturesllInner circuitl1) Fast reverse recovery time (trr)2) Low on-resistance3) Fast switching speed4) Drive circuits can be simple5) Pb-free plating ; RoHS compliantlApplicationllPa

isc N-Channel MOSFET Transistor R6006JND3FEATURESDrain Current I =6A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 936m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos

isc N-Channel MOSFET Transistor R6006KNXFEATURESDrain Current I =6A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 830m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

isc N-Channel MOSFET Transistor R6006JNJFEATURESDrain Current I =6A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 936m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

isc N-Channel MOSFET Transistor R6006KND3FEATURESDrain Current I =6A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 830m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos

isc N-Channel MOSFET Transistor R6006JNXFEATURESDrain Current I =6A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 936m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose