R6015ANJ Todos los transistores

 ..1. Size:322K  rohm
 r6015anj.pdf

10V Drive Nch MOSFET R6015ANJ Structure Dimensions (Unit mm) Silicon N-channel MOSFET LPTS 10.1 4.5 1.3 Features 1) Low on-resistance. 2) Fast switching speed. 1.24 3) Gate-source voltage (VGSS) guaranteed to be 30V. 4) Drive circuits can be simple. 2.54 0.4 0.78 2.7 5.08 5) Parallel use is easy. (1) Gate (1) (2) (3) (2) Drain (3) Source Each lead has same

 7.1. Size:1150K  rohm
 r6015anz.pdf

Data Sheet 10V Drive Nch MOSFET R6015ANZ Structure Dimensions (Unit mm) Silicon N-channel MOSFET 5.5 TO-3PF 3.0 15.5 3.6 Features 1) Low on-resistance. 2) Low input capacitance. 2.0 2.0 3.0 3) High ESD. 0.75 (1) (2) (3) (1) Gate 0.9 Application (2) Drain 5.45 5.45 (3) Source Switching Packaging specifications Inner circuit Package Bulk Type C

 7.2. Size:1344K  rohm
 r6015anx.pdf

R6015ANX Nch 600V 15A Power MOSFET Datasheet Outline VDSS 600V TO-220FM RDS(on) (Max.) 0.3 ID 15A PD (1)(2)(3) 50W Features Inner circuit 1) Low on-resistance. (1) Gate 2) Fast switching speed. (2) Drain 3) Gate-source voltage (VGSS) guaranteed to be 30V. (3) Source 4) Drive circuits can be simple. *1 Body Diode 5) Parallel use is easy. 6) Pb-free lead

 9.1. Size:3325K  rohm
 r6015fnj.pdf

R6015FNJ Datasheet Nch 600V 15A Power MOSFET lOutline l LPT(S) VDSS 600V RDS(on)(Max.) 0.35 ID 15A PD 50W lInner circuit l lFeatures l 1) Fast reverse recovery time (trr). 2) Low on-resistance. 3) Fast switching speed. 4) Gate-source voltage (VGSS) guaranteed to

 9.2. Size:1632K  rohm
 r6015knz.pdf

R6015KNZ Datasheet Nch 600V 15A Power MOSFET lOutline l VDSS 600V RDS(on)(Max.) 0.29 TO-3PF ID 15A PD 60W lInner circuit l lFeatures l 1) Low on-resistance. 2) Ultra fast switching speed. 3) Parallel use is easy. 4) Pb-free lead plating ; RoHS compliant lPackaging specifications l Packing Tube Reel size (mm) - lAppl

 9.3. Size:1402K  rohm
 r6015knj.pdf

 9.4. Size:797K  rohm
 r6015enx.pdf

R6015ENX Nch 600V 15A Power MOSFET Data Sheet lOutline VDSS 600V TO-220FM RDS(on) (Max.) 0.290W ID 15A (3) PD 40W (1) (2) lFeatures lInner circuit 1) Low on-resistance. (1) Gate 2) Fast switching speed. (2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 20V. 4) Drive circuits can be simple. *1 BODY DIODE 5) Parallel use is easy. 6) Pb-free lea

 9.5. Size:1263K  rohm
 r6015fnx.pdf

Data Sheet 10V Drive Nch MOSFET R6015FNX Structure Dimensions (Unit mm) TO-220FM Silicon N-channel MOSFET 10.0 3.2 4.5 2.8 Features 1) Fast reverse recovery time (trr) 1.2 1.3 2) Low on-resistance. 0.8 3) Fast switching speed. 2.54 2.54 0.75 2.6 4) Gate-source voltage (1) (2) (3) VGSS garanteed to be 30V . 5) Drive circuits can be simple. 6) Parallel us

 9.6. Size:871K  rohm
 r6015enz.pdf

R6015ENZ Nch 600V 15A Power MOSFET Data Sheet lOutline VDSS 600V TO-3PF RDS(on) (Max.) 0.290W ID 15A (1) (2) PD 120W (3) lFeatures lInner circuit 1) Low on-resistance. (1) Gate 2) Fast switching speed. (2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 20V. 4) Drive circuits can be simple. *1 BODY DIODE 5) Parallel use is easy. 6) Pb-free lead

 9.7. Size:769K  rohm
 r6015enj.pdf

R6015ENJ Nch 600V 15A Power MOSFET Data Sheet lOutline (2) VDSS 600V LPT(S) (SC-83) RDS(on) (Max.) 0.290W ID 15A (1) PD 40W (3) lFeatures lInner circuit 1) Low on-resistance. (1) Gate 2) Fast switching speed. (2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 20V. 4) Drive circuits can be simple. *1 BODY DIODE 5) Parallel use is easy. 6) Pb-

 9.8. Size:265K  inchange semiconductor
 r6015knz.pdf

isc N-Channel MOSFET Transistor R6015KNZ FEATURES Drain Current I = 15A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R = 290m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo

 9.9. Size:255K  inchange semiconductor
 r6015knj.pdf

isc N-Channel MOSFET Transistor R6015KNJ FEATURES Drain Current I = 15A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R = 290m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo

 9.10. Size:252K  inchange semiconductor
 r6015enx.pdf

isc N-Channel MOSFET Transistor R6015ENX FEATURES Drain Current I = 15A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R = 290m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo

 9.11. Size:265K  inchange semiconductor
 r6015enz.pdf

isc N-Channel MOSFET Transistor R6015ENZ FEATURES Drain Current I = 15A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R = 290m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo

 9.12. Size:255K  inchange semiconductor
 r6015enj.pdf

isc N-Channel MOSFET Transistor R6015ENJ FEATURES Drain Current I = 15A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R = 290m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo