R6015ANX Todos los transistores

R6015ANX Nch 600V 15A Power MOSFET Datasheet Outline VDSS 600V TO-220FM RDS(on) (Max.) 0.3 ID 15A PD (1)(2)(3) 50W Features Inner circuit 1) Low on-resistance. (1) Gate 2) Fast switching speed. (2) Drain 3) Gate-source voltage (VGSS) guaranteed to be 30V. (3) Source 4) Drive circuits can be simple. *1 Body Diode 5) Parallel use is easy. 6) Pb-free lead

Data Sheet 10V Drive Nch MOSFET R6015ANZ Structure Dimensions (Unit mm) Silicon N-channel MOSFET 5.5 TO-3PF 3.0 15.5 3.6 Features 1) Low on-resistance. 2) Low input capacitance. 2.0 2.0 3.0 3) High ESD. 0.75 (1) (2) (3) (1) Gate 0.9 Application (2) Drain 5.45 5.45 (3) Source Switching Packaging specifications Inner circuit Package Bulk Type C

10V Drive Nch MOSFET R6015ANJ Structure Dimensions (Unit mm) Silicon N-channel MOSFET LPTS 10.1 4.5 1.3 Features 1) Low on-resistance. 2) Fast switching speed. 1.24 3) Gate-source voltage (VGSS) guaranteed to be 30V. 4) Drive circuits can be simple. 2.54 0.4 0.78 2.7 5.08 5) Parallel use is easy. (1) Gate (1) (2) (3) (2) Drain (3) Source Each lead has same

R6015FNJ Datasheet Nch 600V 15A Power MOSFET lOutline l LPT(S) VDSS 600V RDS(on)(Max.) 0.35 ID 15A PD 50W lInner circuit l lFeatures l 1) Fast reverse recovery time (trr). 2) Low on-resistance. 3) Fast switching speed. 4) Gate-source voltage (VGSS) guaranteed to

R6015KNZ Datasheet Nch 600V 15A Power MOSFET lOutline l VDSS 600V RDS(on)(Max.) 0.29 TO-3PF ID 15A PD 60W lInner circuit l lFeatures l 1) Low on-resistance. 2) Ultra fast switching speed. 3) Parallel use is easy. 4) Pb-free lead plating ; RoHS compliant lPackaging specifications l Packing Tube Reel size (mm) - lAppl

R6015ENX Nch 600V 15A Power MOSFET Data Sheet lOutline VDSS 600V TO-220FM RDS(on) (Max.) 0.290W ID 15A (3) PD 40W (1) (2) lFeatures lInner circuit 1) Low on-resistance. (1) Gate 2) Fast switching speed. (2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 20V. 4) Drive circuits can be simple. *1 BODY DIODE 5) Parallel use is easy. 6) Pb-free lea

Data Sheet 10V Drive Nch MOSFET R6015FNX Structure Dimensions (Unit mm) TO-220FM Silicon N-channel MOSFET 10.0 3.2 4.5 2.8 Features 1) Fast reverse recovery time (trr) 1.2 1.3 2) Low on-resistance. 0.8 3) Fast switching speed. 2.54 2.54 0.75 2.6 4) Gate-source voltage (1) (2) (3) VGSS garanteed to be 30V . 5) Drive circuits can be simple. 6) Parallel us

R6015ENZ Nch 600V 15A Power MOSFET Data Sheet lOutline VDSS 600V TO-3PF RDS(on) (Max.) 0.290W ID 15A (1) (2) PD 120W (3) lFeatures lInner circuit 1) Low on-resistance. (1) Gate 2) Fast switching speed. (2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 20V. 4) Drive circuits can be simple. *1 BODY DIODE 5) Parallel use is easy. 6) Pb-free lead

R6015ENJ Nch 600V 15A Power MOSFET Data Sheet lOutline (2) VDSS 600V LPT(S) (SC-83) RDS(on) (Max.) 0.290W ID 15A (1) PD 40W (3) lFeatures lInner circuit 1) Low on-resistance. (1) Gate 2) Fast switching speed. (2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 20V. 4) Drive circuits can be simple. *1 BODY DIODE 5) Parallel use is easy. 6) Pb-

isc N-Channel MOSFET Transistor R6015KNZ FEATURES Drain Current I = 15A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R = 290m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo

isc N-Channel MOSFET Transistor R6015KNJ FEATURES Drain Current I = 15A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R = 290m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo

isc N-Channel MOSFET Transistor R6015ENX FEATURES Drain Current I = 15A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R = 290m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo

isc N-Channel MOSFET Transistor R6015ENZ FEATURES Drain Current I = 15A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R = 290m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo

isc N-Channel MOSFET Transistor R6015ENJ FEATURES Drain Current I = 15A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R = 290m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo