RCX120N25 Todos los transistores

 ..1. Size:1169K  rohm
 rcx120n25.pdf

Data Sheet 10V Drive Nch MOSFET RCX120N25 Structure Dimensions (Unit mm) TO-220FM Silicon N-channel MOSFET 10.0 3.2 4.5 2.8 1.2 Features 1.3 1) Low on-resistance. 0.8 2) High speed switching. 2.54 2.54 0.75 2.6 3) Gate-source voltage VGSS garanteed to be 30V (1) (2) (3) 4) High Power Package (TO-220FM). Application Inner circuit Switching 1

 ..2. Size:251K  inchange semiconductor
 rcx120n25.pdf

isc N-Channel MOSFET Transistor RCX120N25 FEATURES Drain Current I = 12A@ T =25 D C Drain Source Voltage- V =250V(Min) DSS Static Drain-Source On-Resistance R = 235m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp

 6.1. Size:1180K  rohm
 rcx120n20.pdf

Data Sheet 10V Drive Nch MOSFET RCX120N20 Structure Dimensions (Unit mm) TO-220FM Silicon N-channel MOSFET 10.0 3.2 4.5 2.8 Features 1.2 1) Low on-resistance. 1.3 2) Low input capacitance. 0.8 3) High ESD. 2.54 2.54 0.75 2.6 (1) (2) (3) Application Switching Packaging specifications Inner circuit Package Bulk Type Code - 1 Basic ordering un

 6.2. Size:252K  inchange semiconductor
 rcx120n20.pdf

isc N-Channel MOSFET Transistor RCX120N20 FEATURES Drain Current I = 12A@ T =25 D C Drain Source Voltage- V =200V(Min) DSS Static Drain-Source On-Resistance R = 325m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp