RHK005N03 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: RHK005N03
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.2 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 0.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 10 nS
Cossⓘ - Capacitancia de salida: 20 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.35 Ohm
Paquete / Cubierta: SMT3
Búsqueda de reemplazo de RHK005N03 MOSFET
RHK005N03 Datasheet (PDF)
rhk005n03.pdf

RHK005N03 Transistors 4V Drive Nch MOS FET RHK005N03 Structure External dimensions (Unit : mm) Silicon N-channel MOS FET SMT32.9 1.10.4 0.8 Features (3)1) Low On-resistance. 2) High speed switching. (2) (1)0.95 0.950.15 1.9(1)Source ApplicationsEach lead has same dimensions(2)GateSwitching (3)Drain Abbreviated symbol : KU Packaging specifications
rhk005n03t146.pdf

RHK005N03 Transistors 4V Drive Nch MOS FET RHK005N03 Structure External dimensions (Unit : mm) Silicon N-channel MOS FET SMT32.9 1.10.4 0.8 Features (3)1) Low On-resistance. 2) High speed switching. (2) (1)0.95 0.950.15 1.9(1)Source ApplicationsEach lead has same dimensions(2)GateSwitching (3)Drain Abbreviated symbol : KU Packaging specifications
rhk005n03fra.pdf

RHK005N03FRARHK005N03TransistorsAEC-Q101 Qualified4V Drive Nch MOS FET RHK005N03FRARHK005N03 Structure External dimensions (Unit : mm)Silicon N-channel MOS FET SMT32.9 1.10.4 0.8 Features (3)1) Low On-resistance. 2) High speed switching. (2) (1)0.95 0.950.151.9(1)Source ApplicationsEach lead has same dimensions(2)GateSwitching (3)Drain Abbrevia
rhk003n06fra.pdf

RHK003N06FRARHK003N06TransistorsAEC-Q101 Qualified4V Drive Nch MOS FET RHK003N06FRARHK003N06 Structure External dimensions (Unit : mm)Silicon N-channel MOS FET SMT32.9 1.10.4 0.8 Features (3)1) Low On-resistance. 2) 4V drive. (2) (1)0.95 0.950.151.9(1)Source ApplicationsEach lead has same dimensions(2)GateSwitching (3)Drain Abbreviated symbol :
Otros transistores... RCX050N25 , RCX080N20 , RCX080N25 , RCX120N20 , RCX120N25 , RCX160N20 , RCX330N25 , RCX450N20 , IRF2807 , RHP020N06 , RHP030N03 , RJK005N03 , RJP020N06 , RK7002B , RMW130N03 , RMW150N03 , RMW180N03 .
History: SRC60R090BS | HSCE2530 | BUZ101L | STE24NA100 | SK860314 | PSMN004-36B | IPD60R600P7
History: SRC60R090BS | HSCE2530 | BUZ101L | STE24NA100 | SK860314 | PSMN004-36B | IPD60R600P7



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