RJK005N03 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: RJK005N03
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.2 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 0.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 11 nS
Cossⓘ - Capacitancia de salida: 24 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.4 Ohm
Paquete / Cubierta: SMT3
Búsqueda de reemplazo de RJK005N03 MOSFET
RJK005N03 Datasheet (PDF)
rjk005n03.pdf
RJK005N03 Transistors 2.5V Drive Nch MOS FET RJK005N03 Structure External dimensions (Unit : mm) Silicon N-channel MOS FET SMT32.9 1.10.4 0.8 Features (3)1) Low On-resistance. 2) Low voltage drive (2.5V drive). (2) (1)0.95 0.950.151.9(1)Source ApplicationsEach lead has same dimensions(2)GateSwitching (3)Drain Abbreviated symbol : KV Packaging spec
rjk005n03t146.pdf
RJK005N03 Transistors 2.5V Drive Nch MOS FET RJK005N03 Structure External dimensions (Unit : mm) Silicon N-channel MOS FET SMT32.9 1.10.4 0.8 Features (3)1) Low On-resistance. 2) Low voltage drive (2.5V drive). (2) (1)0.95 0.950.151.9(1)Source ApplicationsEach lead has same dimensions(2)GateSwitching (3)Drain Abbreviated symbol : KV Packaging spec
rjk005n03fra.pdf
RJK005N03RJK005N03FRATransistorsAEC-Q101 Qualified2.5V Drive Nch MOS FET RJK005N03FRARJK005N03 Structure External dimensions (Unit : mm)Silicon N-channel MOS FET SMT32.9 1.10.4 0.8 Features (3)1) Low On-resistance. 2) Low voltage drive (2.5V drive). (2) (1)0.95 0.950.151.9(1)Source ApplicationsEach lead has same dimensions(2)GateSwitching (3)Dr
Otros transistores... RCX120N20 , RCX120N25 , RCX160N20 , RCX330N25 , RCX450N20 , RHK005N03 , RHP020N06 , RHP030N03 , K2611 , RJP020N06 , RK7002B , RMW130N03 , RMW150N03 , RMW180N03 , RMW200N03 , RMW280N03 , RP1A090ZP .
History: AOD450A70
History: AOD450A70
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