RJP020N06 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RJP020N06

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 2 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 18 nS

Cossⓘ - Capacitancia de salida: 50 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.165 Ohm

Encapsulados: MPT3

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RJP020N06 datasheet

 ..1. Size:54K  rohm
 rjp020n06.pdf pdf_icon

RJP020N06

RJP020N06 Transistors 2.5V Drive Nch MOS FET RJP020N06 Structure External dimensions (Unit mm) Silicon N-channel MOS FET MPT3 4.5 1.5 1.6 Features 1) Low On-resistance. (1) (2) (3) 2) Low voltage drive (2.5V drive). 0.4 0.5 0.4 0.4 1.5 1.5 3.0 (1)Gate Applications (2)Drain Switching (3)Source Abbreviated symbol LS Packaging specifications Inner circu

 0.1. Size:52K  rohm
 rjp020n06t100.pdf pdf_icon

RJP020N06

RJP020N06 Transistors 2.5V Drive Nch MOS FET RJP020N06 Structure External dimensions (Unit mm) Silicon N-channel MOS FET MPT3 4.5 1.5 1.6 Features 1) Low On-resistance. (1) (2) (3) 2) Low voltage drive (2.5V drive). 0.4 0.5 0.4 0.4 1.5 1.5 3.0 (1)Gate Applications (2)Drain Switching (3)Source Abbreviated symbol LS Packaging specifications Inner circu

 0.2. Size:1624K  cn vbsemi
 rjp020n06t100.pdf pdf_icon

RJP020N06

RJP020N06T100 www.VBsemi.tw N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.076 at VGS = 4.5 V 7.1 RoHS 29 nC COMPLIANT 60 APPLICATIONS 0.088 at VGS = 10 V 6.7 Load Switches for Portable Devices D D G S G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherw

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