BUZ906P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: BUZ906P
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 125 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 200 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 14 V
   |Id|ⓘ - Corriente continua de drenaje: 8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(off)|ⓘ - Voltaje de corte de la puerta: 0.15 V
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.4 Ohm
   Paquete / Cubierta: TO247

Búsqueda de reemplazo de MOSFET BUZ906P

BUZ906P Datasheet (PDF)

..1. Size:40K magnatec
buz905p buz906p.pdf

BUZ905PMAGNABUZ906PTECMECHANICAL DATADimensions in mm (inches) PCHANNELPOWER MOSFET4.69 (0.185) 15.49 (0.610)5.31 (0.209) 16.26 (0.640)1.49 (0.059)2.49 (0.098)POWER MOSFETS FOR AUDIO APPLICATIONS3.55 (0.140)3.81 (0.150)FEATURES1 2 3 HIGH SPEED SWITCHING1.65 (0.065)2.13 (0.084)0.40 (0.016) PCHANNEL POWER MOSFET0.79 (0.031) 2.87 (0.113)3.1

8.1. Size:35K magnatec
buz905x4s buz906x4s.pdf

BUZ905X4SMAGNABUZ906X4S TECNEW PRODUCT UNDER DEVELOPMENTMECHANICAL DATADimensions in mm (inches) PCHANNELPOWER MOSFET11.8 (0.463)12.2 (0.480)31.5 (1.240)31.7 (1.248)POWER MOSFETS FOR 8.9 (0.350)7.8 (0.307)4.1 (0.161 )8.2 (0.322) W = 9.6 (0.378)Hex Nut M 44.3 (0.169 )(4 places) AUDIO APPLICATIONS4.8 (0.187)H =4.9 (0.193)1 2(4 places)R4.0 (0.

8.2. Size:44K magnatec
buz905d buz906d.pdf

BUZ905DMAGNABUZ906DTECMECHANICAL DATADimensions in mm PCHANNELPOWER MOSFET+0.125.0 -0.158.7 Max.10.90 0.11.50 11.60POWER MOSFETS FOR Typ. 0.3AUDIO APPLICATIONSFEATURES1 2 HIGH SPEED SWITCHING PCHANNEL POWER MOSFET SEMEFAB DESIGNED AND DIFFUSED HIGH VOLTAGE (160V & 200V)R 4.0 0.1 R 4.4 0.2 HIGH ENERGY RATING ENHANC

8.3. Size:43K magnatec
buz905dp buz906dp.pdf

BUZ905DPMAGNABUZ906DPTECMECHANICAL DATADimensions in mm PCHANNELPOWER MOSFET20.0 5.03.3 Dia.POWER MOSFETS FOR AUDIO APPLICATIONSFEATURES1 2 3 HIGH SPEED SWITCHING2.0 1.0 PCHANNEL POWER MOSFET2.0 SEMEFAB DESIGNED AND DIFFUSED3.4 HIGH VOLTAGE (160V & 200V) HIGH ENERGY RATING0.61.2 ENHANCEMENT MODE2.8 INTEGRAL PROTECTION D

Otros transistores... BUZ905 , BUZ905D , BUZ905DP , BUZ905P , BUZ905X4S , BUZ906 , BUZ906D , BUZ906DP , AON6380 , BUZ906X4S , BUZ907 , BUZ907D , BUZ907DP , BUZ907P , BUZ908 , BUZ908D , BUZ908DP .

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