BUZ906P Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BUZ906P  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 125 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 200 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 14 V

|Id|ⓘ - Corriente continua de drenaje: 8 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.4 Ohm

Encapsulados: TO247

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BUZ906P datasheet

 ..1. Size:40K  magnatec
 buz905p buz906p.pdf pdf_icon

BUZ906P

BUZ905P MAGNA BUZ906P TEC MECHANICAL DATA Dimensions in mm (inches) P CHANNEL POWER MOSFET 4.69 (0.185) 15.49 (0.610) 5.31 (0.209) 16.26 (0.640) 1.49 (0.059) 2.49 (0.098) POWER MOSFETS FOR AUDIO APPLICATIONS 3.55 (0.140) 3.81 (0.150) FEATURES 1 2 3 HIGH SPEED SWITCHING 1.65 (0.065) 2.13 (0.084) 0.40 (0.016) P CHANNEL POWER MOSFET 0.79 (0.031) 2.87 (0.113) 3.1

 8.1. Size:35K  magnatec
 buz905x4s buz906x4s.pdf pdf_icon

BUZ906P

BUZ905X4S MAGNA BUZ906X4S TEC NEW PRODUCT UNDER DEVELOPMENT MECHANICAL DATA Dimensions in mm (inches) P CHANNEL POWER MOSFET 11.8 (0.463) 12.2 (0.480) 31.5 (1.240) 31.7 (1.248) POWER MOSFETS FOR 8.9 (0.350) 7.8 (0.307) 4.1 (0.161 ) 8.2 (0.322) W = 9.6 (0.378) Hex Nut M 4 4.3 (0.169 ) (4 places) AUDIO APPLICATIONS 4.8 (0.187) H = 4.9 (0.193) 1 2 (4 places) R 4.0 (0.

 8.2. Size:44K  magnatec
 buz905d buz906d.pdf pdf_icon

BUZ906P

BUZ905D MAGNA BUZ906D TEC MECHANICAL DATA Dimensions in mm P CHANNEL POWER MOSFET +0.1 25.0 -0.15 8.7 Max. 10.90 0.1 1.50 11.60 POWER MOSFETS FOR Typ. 0.3 AUDIO APPLICATIONS FEATURES 1 2 HIGH SPEED SWITCHING P CHANNEL POWER MOSFET SEMEFAB DESIGNED AND DIFFUSED HIGH VOLTAGE (160V & 200V) R 4.0 0.1 R 4.4 0.2 HIGH ENERGY RATING ENHANC

 8.3. Size:43K  magnatec
 buz905dp buz906dp.pdf pdf_icon

BUZ906P

BUZ905DP MAGNA BUZ906DP TEC MECHANICAL DATA Dimensions in mm P CHANNEL POWER MOSFET 20.0 5.0 3.3 Dia. POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES 1 2 3 HIGH SPEED SWITCHING 2.0 1.0 P CHANNEL POWER MOSFET 2.0 SEMEFAB DESIGNED AND DIFFUSED 3.4 HIGH VOLTAGE (160V & 200V) HIGH ENERGY RATING 0.6 1.2 ENHANCEMENT MODE 2.8 INTEGRAL PROTECTION D

MOSTRAR MÁS

Otros transistores... BUZ905, BUZ905D, BUZ905DP, BUZ905P, BUZ905X4S, BUZ906, BUZ906D, BUZ906DP, IRL3713, BUZ906X4S, BUZ907, BUZ907D, BUZ907DP, BUZ907P, BUZ908, BUZ908D, BUZ908DP