RT1A045AP Todos los transistores

 

RT1A045AP MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: RT1A045AP
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.25 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 12 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
   |Id|ⓘ - Corriente continua de drenaje: 4.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 60 nS
   Cossⓘ - Capacitancia de salida: 350 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.022 Ohm
   Paquete / Cubierta: TSST8
 

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RT1A045AP Datasheet (PDF)

 ..1. Size:1126K  rohm
 rt1a045ap.pdf pdf_icon

RT1A045AP

Data Sheet1.5V Drive Pch MOSFETRT1A045AP Structure Dimensions (Unit : mm)Silicon P-channel MOSFETTSST8(8) (7) (6) (5)Features1) Low On-resistance.2) Small high power package. (1) (2) (3) (4)3) Low voltage drive.(1.5V)Abbreviated symbol : SC ApplicationSwitching Packaging specifications Inner circuitPackage Taping(8) (7) (6) (5)TypeCode TR

 8.1. Size:218K  rohm
 rt1a040zptr.pdf pdf_icon

RT1A045AP

1.5V Drive Pch MOSFET RT1A040ZP Structure Dimensions (Unit : mm) Silicon P-channel MOSFET TSST8(8) (7) (6) (5) Features 1) Low on-resistance. 2) High power package. (1) (2) (3) (4)3) Low voltage drive. (1.5V) Abbreviated symbol : YEEach lead has same dimensions Applications Switching Packaging specifications Equivalent circuit Package Taping (8) (7) (6) (5)

 9.1. Size:214K  rohm
 rt1a050zptr.pdf pdf_icon

RT1A045AP

1.5V Drive Pch MOSFET RT1A050ZP Structure Dimensions (Unit : mm) Silicon P-channel MOSFET TSST8(8) (7) (6) (5) Features 1) Low on-resistance. 2) High power package. (1) (2) (3) (4)3) Low voltage drive. (1.5V) Abbreviated symbol : YH Applications Each lead has same dimensionsSwitching Packaging specifications Equivalent circuit Package Taping(8) (7) (6) (5)

 9.2. Size:214K  rohm
 rt1a050zp.pdf pdf_icon

RT1A045AP

1.5V Drive Pch MOSFET RT1A050ZP Structure Dimensions (Unit : mm) Silicon P-channel MOSFET TSST8(8) (7) (6) (5) Features 1) Low on-resistance. 2) High power package. (1) (2) (3) (4)3) Low voltage drive. (1.5V) Abbreviated symbol : YH Applications Each lead has same dimensionsSwitching Packaging specifications Equivalent circuit Package Taping(8) (7) (6) (5)

MOSTRAR MÁS

Otros transistores... RSQ045N03 , RSR010N10 , RSR020N06 , RSR025N03 , RSR025N05 , RSR030N06 , RSU002N06 , RSU002P03 , P60NF06 , RT1A050ZP , RT1A060AP , RT1C060UN , RT1E040RP , RT1E050RP , RT1E060XN , RTF015N03 , RTF016N05 .

History: SSM6N44FU | AP4024EJB | ELM16400EA | NCE65N460 | 2SK1098-M | VBP15R50S | HM2302E

 

 
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