RT1A045AP Todos los transistores

 

RT1A045AP MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: RT1A045AP
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.25 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 12 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
   |Id|ⓘ - Corriente continua de drenaje: 4.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 60 nS
   Cossⓘ - Capacitancia de salida: 350 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.022 Ohm
   Paquete / Cubierta: TSST8
 

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RT1A045AP PDF Specs

 ..1. Size:1126K  rohm
 rt1a045ap.pdf pdf_icon

RT1A045AP

Data Sheet 1.5V Drive Pch MOSFET RT1A045AP Structure Dimensions (Unit mm) Silicon P-channel MOSFET TSST8 (8) (7) (6) (5) Features 1) Low On-resistance. 2) Small high power package. (1) (2) (3) (4) 3) Low voltage drive.(1.5V) Abbreviated symbol SC Application Switching Packaging specifications Inner circuit Package Taping (8) (7) (6) (5) Type Code TR ... See More ⇒

 8.1. Size:218K  rohm
 rt1a040zptr.pdf pdf_icon

RT1A045AP

1.5V Drive Pch MOSFET RT1A040ZP Structure Dimensions (Unit mm) Silicon P-channel MOSFET TSST8 (8) (7) (6) (5) Features 1) Low on-resistance. 2) High power package. (1) (2) (3) (4) 3) Low voltage drive. (1.5V) Abbreviated symbol YE Each lead has same dimensions Applications Switching Packaging specifications Equivalent circuit Package Taping (8) (7) (6) (5) ... See More ⇒

 9.1. Size:214K  rohm
 rt1a050zptr.pdf pdf_icon

RT1A045AP

1.5V Drive Pch MOSFET RT1A050ZP Structure Dimensions (Unit mm) Silicon P-channel MOSFET TSST8 (8) (7) (6) (5) Features 1) Low on-resistance. 2) High power package. (1) (2) (3) (4) 3) Low voltage drive. (1.5V) Abbreviated symbol YH Applications Each lead has same dimensions Switching Packaging specifications Equivalent circuit Package Taping (8) (7) (6) (5) ... See More ⇒

 9.2. Size:214K  rohm
 rt1a050zp.pdf pdf_icon

RT1A045AP

1.5V Drive Pch MOSFET RT1A050ZP Structure Dimensions (Unit mm) Silicon P-channel MOSFET TSST8 (8) (7) (6) (5) Features 1) Low on-resistance. 2) High power package. (1) (2) (3) (4) 3) Low voltage drive. (1.5V) Abbreviated symbol YH Applications Each lead has same dimensions Switching Packaging specifications Equivalent circuit Package Taping (8) (7) (6) (5) ... See More ⇒

SHOW MORE

Otros transistores... RSQ045N03 , RSR010N10 , RSR020N06 , RSR025N03 , RSR025N05 , RSR030N06 , RSU002N06 , RSU002P03 , AO4407 , RT1A050ZP , RT1A060AP , RT1C060UN , RT1E040RP , RT1E050RP , RT1E060XN , RTF015N03 , RTF016N05 .

 

 
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