RTR025N05 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RTR025N05  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 45 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 2.5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 15 nS

Cossⓘ - Capacitancia de salida: 60 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.095 Ohm

Encapsulados: TSMT3

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RTR025N05 datasheet

 ..1. Size:216K  rohm
 rtr025n05.pdf pdf_icon

RTR025N05

2.5V Drive Nch MOSFET RTR025N05 Structure Dimensions (Unit mm) Silicon N-channel MOSFET TSMT3 1.0MAX 2.9 0.85 0.4 0.7 ( ) 3 Features 1) Low On-resistance. 2) Built-in G-S Protection Diode. ( ) ( ) 1 2 3) Small Surface Mount Package (TSMT3). 0.95 0.95 0.16 1.9 (1) Gate Each lead has same dimensions (2) Source Abbreviated symbol PW (3) Drain Application

 0.1. Size:214K  rohm
 rtr025n05tl.pdf pdf_icon

RTR025N05

2.5V Drive Nch MOSFET RTR025N05 Structure Dimensions (Unit mm) Silicon N-channel MOSFET TSMT3 1.0MAX 2.9 0.85 0.4 0.7 ( ) 3 Features 1) Low On-resistance. 2) Built-in G-S Protection Diode. ( ) ( ) 1 2 3) Small Surface Mount Package (TSMT3). 0.95 0.95 0.16 1.9 (1) Gate Each lead has same dimensions (2) Source Abbreviated symbol PW (3) Drain Application

 0.2. Size:1056K  rohm
 rtr025n05fra.pdf pdf_icon

RTR025N05

AEC-Q101 Qualified 2.5V Drive Nch MOSFET RTR025N05 RTR025N05FRA Structure Dimensions (Unit mm) Silicon N-channel MOSFET TSMT3 1.0MAX 2.9 0.85 0.4 0.7 ( ) 3 Features 1) Low On-resistance. 2) Built-in G-S Protection Diode. ( ) ( ) 1 2 3) Small Surface Mount Package (TSMT3). 0.95 0.95 0.16 1.9 (1) Gate Each lead has same dimensions (2) Source Abbreviated symbo

 0.3. Size:1451K  cn vbsemi
 rtr025n05t.pdf pdf_icon

RTR025N05

RTR025N05T www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.030 at VGS = 10 V TrenchFET Power MOSFET 6.5 30 4.5 nC 100 % Rg Tested 0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/EC APPLICATIONS DC/DC Converter D TO-236 (SOT-23)

MOSTRAR MÁS

Otros transistores... RTF025N03, RTL035N03, RTQ020N03, RTQ020N05, RTQ035N03, RTQ045N03, RTR020N05, RTR025N03, AO3407, RTR030N05, RTR040N03, RU1C002UN, RU1C002ZP, RU1E002SP, RU1L002SN, RUC002N05, RUE002N02