RTR040N03 Todos los transistores

 

RTR040N03 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: RTR040N03
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 18 nS
   Cossⓘ - Capacitancia de salida: 120 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.034 Ohm
   Paquete / Cubierta: TSMT3
 

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RTR040N03 Datasheet (PDF)

 ..1. Size:80K  rohm
 rtr040n03.pdf pdf_icon

RTR040N03

RTR040N03 Transistors 2.5V Drive Nch MOS FET RTR040N03 External dimensions (Unit : mm) Structure Silicon N-channel TSMT31.0MAXMOS FET 2.90.850.4 0.7(3) Features 1) Low On-resistance. (1) (2)0.95 0.952) Built-in G-S Protection Diode. 0.161.93) Small Surface Mount Package (TSMT3). (1) Gate Each lead has same dimensions(2) SourceAbbreviated symbol : QV

 0.1. Size:77K  rohm
 rtr040n03tl.pdf pdf_icon

RTR040N03

RTR040N03 Transistors 2.5V Drive Nch MOS FET RTR040N03 External dimensions (Unit : mm) Structure Silicon N-channel TSMT31.0MAXMOS FET 2.90.850.4 0.7(3) Features 1) Low On-resistance. (1) (2)0.95 0.952) Built-in G-S Protection Diode. 0.161.93) Small Surface Mount Package (TSMT3). (1) Gate Each lead has same dimensions(2) SourceAbbreviated symbol : QV

 0.2. Size:940K  rohm
 rtr040n03fra.pdf pdf_icon

RTR040N03

RTR040N03FRARTR040N03TransistorsAEC-Q101 Qualified2.5V Drive Nch MOS FET RTR040N03RTR040N03FRA External dimensions (Unit : mm) StructureSilicon N-channel TSMT31.0MAXMOS FET2.90.850.4 0.7(3) Features 1) Low On-resistance. (1) (2)0.95 0.952) Built-in G-S Protection Diode. 0.161.93) Small Surface Mount Package (TSMT3). (1) Gate Each lead has same dimen

 0.3. Size:894K  cn vbsemi
 rtr040n03tl.pdf pdf_icon

RTR040N03

RTR040N03TLwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.030 at VGS = 10 V TrenchFET Power MOSFET6.530 4.5 nC 100 % Rg Tested0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS DC/DC ConverterDTO-236(SOT-23)

MOSTRAR MÁS

Otros transistores... RTQ020N03 , RTQ020N05 , RTQ035N03 , RTQ045N03 , RTR020N05 , RTR025N03 , RTR025N05 , RTR030N05 , AO3401 , RU1C002UN , RU1C002ZP , RU1E002SP , RU1L002SN , RUC002N05 , RUE002N02 , RUE002N05 , RUF015N02 .

History: CS110N03A3 | STL22N65M5

 

 
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