RUM002N05 Todos los transistores

 

RUM002N05 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: RUM002N05
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.15 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 50 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
   |Id|ⓘ - Corriente continua de drenaje: 0.2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 6 nS
   Cossⓘ - Capacitancia de salida: 6 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.6 Ohm
   Paquete / Cubierta: VMT3
     - Selección de transistores por parámetros

 

RUM002N05 Datasheet (PDF)

 ..1. Size:172K  rohm
 rum002n05.pdf pdf_icon

RUM002N05

1.2V Drive Nch MOSFET RUM002N05 Structure Dimensions (Unit : mm)Silicon N-channel MOSFETVMT3Features1) High speed switing.2) Small package(VMT3).3)Ultra low voltage drive(1.2V drive).Abbreviated symbol : RH ApplicationSwitching Packaging specifications Inner circuitPackage Taping(3)TypeCode T2LBasic ordering unit (pieces) 80001RUM002

 0.1. Size:170K  ruichips
 rum002n05t2l.pdf pdf_icon

RUM002N05

1.2V Drive Nch MOSFET RUM002N05 Structure Dimensions (Unit : mm)Silicon N-channel MOSFETVMT3Features1) High speed switing.2) Small package(VMT3).3)Ultra low voltage drive(1.2V drive).Abbreviated symbol : RH ApplicationSwitching Packaging specifications Inner circuitPackage Taping(3)TypeCode T2LBasic ordering unit (pieces) 80001RUM002

 6.1. Size:214K  rohm
 rum002n02.pdf pdf_icon

RUM002N05

1.2V Drive Nch MOSFET RUM002N02 Structure Dimensions (Unit : mm) Silicon N-channel VMT3MOSFET Applications Switching (1)Gate Features (2)Souce(3)DrainAbbreviated symbol : QR1) Fast switching speed. 2) Low voltage drive (1.2V) makes this device ideal for portable equipment. 3) Drive circuits can be simple. Inner circuit (3) Packaging specifications Pac

 6.2. Size:213K  ruichips
 rum002n02t2l.pdf pdf_icon

RUM002N05

1.2V Drive Nch MOSFET RUM002N02 Structure Dimensions (Unit : mm) Silicon N-channel VMT3MOSFET Applications Switching (1)Gate Features (2)Souce(3)DrainAbbreviated symbol : QR1) Fast switching speed. 2) Low voltage drive (1.2V) makes this device ideal for portable equipment. 3) Drive circuits can be simple. Inner circuit (3) Packaging specifications Pac

MOSTRAR MÁS

Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: HUFA76423S3ST | P06P03LDG | HM12N20D | NCE65TF099F

 

 
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