RUM002N05 Todos los transistores

 

RUM002N05 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RUM002N05

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.15 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 50 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 8 V

|Id|ⓘ - Corriente continua de drenaje: 0.2 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 6 nS

Cossⓘ - Capacitancia de salida: 6 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.6 Ohm

Encapsulados: VMT3

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RUM002N05 datasheet

 ..1. Size:172K  rohm
rum002n05.pdf pdf_icon

RUM002N05

1.2V Drive Nch MOSFET RUM002N05 Structure Dimensions (Unit mm) Silicon N-channel MOSFET VMT3 Features 1) High speed switing. 2) Small package(VMT3). 3)Ultra low voltage drive(1.2V drive). Abbreviated symbol RH Application Switching Packaging specifications Inner circuit Package Taping (3) Type Code T2L Basic ordering unit (pieces) 8000 1 RUM002

 0.1. Size:170K  ruichips
rum002n05t2l.pdf pdf_icon

RUM002N05

1.2V Drive Nch MOSFET RUM002N05 Structure Dimensions (Unit mm) Silicon N-channel MOSFET VMT3 Features 1) High speed switing. 2) Small package(VMT3). 3)Ultra low voltage drive(1.2V drive). Abbreviated symbol RH Application Switching Packaging specifications Inner circuit Package Taping (3) Type Code T2L Basic ordering unit (pieces) 8000 1 RUM002

 6.1. Size:214K  rohm
rum002n02.pdf pdf_icon

RUM002N05

1.2V Drive Nch MOSFET RUM002N02 Structure Dimensions (Unit mm) Silicon N-channel VMT3 MOSFET Applications Switching (1)Gate Features (2)Souce (3)Drain Abbreviated symbol QR 1) Fast switching speed. 2) Low voltage drive (1.2V) makes this device ideal for portable equipment. 3) Drive circuits can be simple. Inner circuit (3) Packaging specifications Pac

 6.2. Size:213K  ruichips
rum002n02t2l.pdf pdf_icon

RUM002N05

1.2V Drive Nch MOSFET RUM002N02 Structure Dimensions (Unit mm) Silicon N-channel VMT3 MOSFET Applications Switching (1)Gate Features (2)Souce (3)Drain Abbreviated symbol QR 1) Fast switching speed. 2) Low voltage drive (1.2V) makes this device ideal for portable equipment. 3) Drive circuits can be simple. Inner circuit (3) Packaging specifications Pac

Otros transistores... RUC002N05 , RUE002N02 , RUE002N05 , RUF015N02 , RUF020N02 , RUF025N02 , RUL035N02 , RUM002N02 , AON7403 , RUQ050N02 , RUR020N02 , RUR040N02 , RUU002N05 , RVQ040N05 , RW1A013ZP , RW1A020ZP , RW1A025AP .

History: EMB20N03V

 

 

 


History: EMB20N03V

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