BUZ908P Todos los transistores

 

BUZ908P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BUZ908P
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 125 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 250 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 14 V
   |Id|ⓘ - Corriente continua de drenaje: 8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.5 Ohm
   Paquete / Cubierta: TO247
     - Selección de transistores por parámetros

 

BUZ908P Datasheet (PDF)

 ..1. Size:26K  magnatec
 buz907p buz908p.pdf pdf_icon

BUZ908P

BUZ907PMAGNABUZ908PTECMECHANICAL DATADimensions in mmPCHANNEL4.69 (0.185) 15.49 (0.610) POWER MOSFET5.31 (0.209) 16.26 (0.640)1.49 (0.059)2.49 (0.098)POWER MOSFETS FOR AUDIO APPLICATIONS3.55 (0.140)3.81 (0.150)FEATURES1 2 3 HIGH SPEED SWITCHING1.65 (0.065)2.13 (0.084)0.40 (0.016) SEMEFAB DESIGNED AND DIFFUSED0.79 (0.031) 2.87 (0.113)3.12 (0

 8.1. Size:28K  magnatec
 buz907d buz908d.pdf pdf_icon

BUZ908P

BUZ907DMAGNABUZ908DTECMECHANICAL DATADimensions in mmPCHANNELPOWER MOSFET+0.125.0 -0.158.7 Max.10.90 0.11.50 11.60POWER MOSFETS FOR Typ. 0.3AUDIO APPLICATIONSFEATURES1 2 HIGH SPEED SWITCHING SEMEFAB DESIGNED AND DIFFUSED HIGH VOLTAGE (220V & 250V) HIGH ENERGY RATINGR 4.0 0.1 R 4.4 0.2 ENHANCEMENT MODE INTEGRAL PROT

 8.2. Size:25K  magnatec
 buz907 buz908.pdf pdf_icon

BUZ908P

BUZ907MAGNABUZ908TECMECHANICAL DATADimensions in mmPCHANNELPOWER MOSFET+0.125.0 -0.158.7 Max.10.90 0.11.50 11.60POWER MOSFETS FOR Typ. 0.3AUDIO APPLICATIONSFEATURES1 2 HIGH SPEED SWITCHING SEMEFAB DESIGNED AND DIFFUSED HIGH VOLTAGE (220V & 250V) HIGH ENERGY RATINGR 4.0 0.1 R 4.4 0.2 ENHANCEMENT MODE INTEGRAL PROTEC

 8.3. Size:26K  magnatec
 buz907dp buz908dp.pdf pdf_icon

BUZ908P

BUZ907DPMAGNABUZ908DPTECMECHANICAL DATADimensions in mmPCHANNELPOWER MOSFET20.0 5.03.3 Dia.POWER MOSFETS FOR AUDIO APPLICATIONSFEATURES1 2 3 HIGH SPEED SWITCHING2.0 1.02.0 SEMEFAB DESIGNED AND DIFFUSED3.4 HIGH VOLTAGE (220V & 250V) HIGH ENERGY RATING0.61.2 ENHANCEMENT MODE2.8 INTEGRAL PROTECTION DIODES5.45 5.45 COMPLI

MOSTRAR MÁS

Otros transistores... BUZ906X4S , BUZ907 , BUZ907D , BUZ907DP , BUZ907P , BUZ908 , BUZ908D , BUZ908DP , 5N65 , BUZ90A , BUZ92 , BUZ94 , C2T204 , C2T205 , C2T206 , C2T211 , C2T212 .

History: SL1002B | AOD4158P | 2SJ307 | NCEP60T20 | PDC3902X | SVF10N60STR | SSFD6046

 

 
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