SI2301 Todos los transistores

 

SI2301 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SI2301

Código: A1sHB

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 1.25 W

Tensión drenaje-fuente (Vds): 20 V

Tensión compuerta-fuente (Vgs): 8 V

Corriente continua de drenaje (Id): 2.2 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 0.45 V

Tiempo de elevación (tr): 36 nS

Conductancia de drenaje-sustrato (Cd): 223 pF

Resistencia drenaje-fuente RDS(on): 0.13 Ohm

Empaquetado / Estuche: SOT23

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SI2301 Datasheet (PDF)

1.1. si2301ads.pdf Size:46K _vishay

SI2301
SI2301

Si2301ADS New Product Vishay Siliconix P-Channel 2.5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A)b 0.130 @ VGS = 4.5 V 2.0 20 0.190 @ VGS = 2.5 V 1.6 TO-236 (SOT-23) G 1 3 D S 2 Top View Si2301DS (1A)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 5 sec Steady State Unit Drain-Source Voltage VDS 20 V Gate-Source V

1.2. si2301-tp.pdf Size:333K _vishay

SI2301
SI2301

MCC Micro Commercial Components TM 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 SI2301 Phone: (818) 701-4933 Fax: (818) 701-4939 Features P-Channel • -20V,-2.8A, RDS(ON)=120mΩ@VGS=-4.5V RDS(ON)=150mΩ@VGS=-2.5V Enhancement Mode • High dense cell design for extremely low RDS(ON) • Rugged and reliable Field Effect Transistor • High Sp

 1.3. si2301cds.pdf Size:193K _vishay

SI2301
SI2301

Si2301CDS Vishay Siliconix P-Channel 20 V (D-S) MOSFET FEATURES MOSFET PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) () ID (A)a Qg (Typ.) Definition 0.112 at VGS = - 4.5 V - 3.1 • TrenchFET® Power MOSFET - 20 3.3 nC • Compliant to RoHS Directive 2002/95/EC 0.142 at VGS = - 2.5 V - 2.7 APPLICATIONS • Load Switch TO-236 (SOT-23) G

1.4. si2301bds.pdf Size:184K _vishay

SI2301
SI2301

Si2301BDS Vishay Siliconix P-Channel 2.5-V (G-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free Option Available VDS (V) RDS(on) (?) ID (A)b Pb-free 0.100 at VGS = - 4.5 V Available - 2.4 - 20 0.150 at VGS = - 2.5 V RoHS* - 2.0 COMPLIANT TO-236 (SOT-23) G 1 3 D S 2 Top View Si2301 BDS (L1)* * Marking Code Ordering Information: Si2301BDS-T1 Si2301BDS-T1-E3 (Lead (Pb)-free)

 1.5. si2301ds.pdf Size:61K _vishay

SI2301
SI2301

Si2301DS Vishay Siliconix P-Channel 1.25-W, 2.5-V MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.130 @ VGS = - 4.5 V -2.3 -20 20 0.190 @ VGS = - 2.5 V -1.9 TO-236 (SOT-23) G 1 3 D Ordering Information: Si2301DS-T1 S 2 Top View Si2301DS (A1)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Unit Drain-Source Voltage VDS -20 V

1.6. si2301cd.pdf Size:190K _vishay

SI2301
SI2301

Si2301CDS Vishay Siliconix P-Channel 20 V (D-S) MOSFET FEATURES MOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) (?) ID (A)a Qg (Typ.) Definition 0.112 at VGS = - 4.5 V - 3.1 TrenchFET Power MOSFET - 20 3.3 nC Compliant to RoHS Directive 2002/95/EC 0.142 at VGS = - 2.5 V - 2.7 APPLICATIONS Load Switch TO-236 (SOT-23) G 1 3 D S 2

1.7. si2301.pdf Size:324K _mcc

SI2301
SI2301

MCC Micro Commercial Components TM 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 SI2301 Phone: (818) 701-4933 Fax: (818) 701-4939 Features P-Channel -20V,-2.8A, RDS(ON)=120m?@VGS=-4.5V RDS(ON)=150m?@VGS=-2.5V Enhancement Mode High dense cell design for extremely low RDS(ON) Rugged and reliable Field Effect Transistor High Speed Switching

1.8. si2301.pdf Size:3667K _htsemi

SI2301
SI2301

SI2301 20V P-Channel Enhancement Mode MOSFET VDS= -20V RDS(ON), Vgs@-4.5V, Ids@-2.8A 130m? RDS(ON), Vgs@-2.5V, Ids@-2.0A 190m ? Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions D G S SOT-23(PACKAGE) Millimeter Millimeter REF. REF. Min. Max. Min. Max. A 2.70 3.10 G 1.90 REF. B 2.40 2.80 H 1.00 1.30 C 1.4

1.9. si2301ds-3.pdf Size:1968K _kexin

SI2301
SI2301

SMD Type MOSFET P-Channel Enhancement MOSFET SI2301DS (KI2301DS) SOT-23-3 Unit: mm +0.2 2.9-0.1 +0.1 0.4 -0.1 ■ Features 3 ● VDS (V) =-20V ● RDS(ON) < 100mΩ (VGS =-4.5V) ● RDS(ON) < 150mΩ (VGS =-2.5V) 1 2 +0.02 +0.1 0.15 -0.02 0.95 -0.1 +0.1 1.9 -0.2 G 1 3 D 1. Gate S 2 2. Source 3. Drain ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol 5 se

1.10. si2301bds.pdf Size:1887K _kexin

SI2301
SI2301

SMD Type MOSFET P-Channel Enhancement MOSFET SI2301BDS (KI2301BDS) SOT-23 Unit: mm ■ Features +0.1 2.9 -0.1 0.4+0.1 -0.1 ● VDS (V) =-20V 3 ● RDS(ON) < 100mΩ (VGS =-4.5V) ● RDS(ON) < 150mΩ (VGS =-2.5V) 1 2 +0.1 +0.05 0.95 -0.1 0.1-0.01 +0.1 1.9 -0.1 G 1 1.Gate 3 D 2.Source S 2 3.Drain ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol 5 sec Stea

1.11. si2301ds.pdf Size:1698K _kexin

SI2301
SI2301

SMD Type MOSFET P-Channel Enhancement MOSFET SI2301DS (KI2301DS) ■ Features SOT-23 Unit: mm +0.1 2.9 -0.1 ● VDS (V) =-20V +0.1 0.4-0.1 ● RDS(ON) < 130mΩ (VGS =-4.5V) 3 ● RDS(ON) < 190mΩ (VGS =-2.5V) 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 G 1 1.Gate 3 D 2.Source S 2 3.Drain ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit

1.12. si2301bds-3.pdf Size:1943K _kexin

SI2301
SI2301

SMD Type MOSFET P-Channel Enhancement MOSFET SI2301BDS (KI2301BDS) SOT-23-3 Unit: mm +0.2 2.9-0.1 +0.1 0.4 -0.1 ■ Features 3 ● VDS (V) =-20V ● RDS(ON) < 100mΩ (VGS =-4.5V) ● RDS(ON) < 150mΩ (VGS =-2.5V) 1 2 +0.02 +0.1 0.15 -0.02 0.95 -0.1 +0.1 1.9 -0.2 G 1 3 D 1. Gate S 2 2. Source 3. Drain ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol 5

1.13. si2301 a1shb.pdf Size:885K _shenzhen-tuofeng-semi

SI2301
SI2301

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SI2301 P-Channel SI2301 MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.120 @ VGS = -4.5 V -2.8 -20 20 0.190 @ VGS = -2.5 V -1.8 (SOT-23-3L) (SOT-23) G 1 3 D S 2 Top View SI2301(A1sHB)* ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Unit Drain-Source Voltage VDS -20 V V Gate-Source V

1.14. si2301a.pdf Size:1114K _shenzhen-tuofeng-semi

SI2301
SI2301

Shenzhen Tuofeng Semiconductor Technology Co., Ltd Sl2301A P-Channel SI2301AMOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.080 @ VGS = -4.5 V -2.8 -20 20 0.110 @ VGS = -2.5 V -2.0 SOT-23/-3L G 1 3 D S 2 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Unit Drain-Source Voltage VDS -20 V V Gate-Source Voltage VGS "8 Continuous Drain Curr

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