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AO3407 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AO3407

Código: A79TF

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 1.4 W

Tensión drenaje-fuente (Vds): 30 V

Tensión compuerta-fuente (Vgs): 20 V

Tensión umbral compuerta-fuente Vgs(th): 2.5 V

Corriente continua de drenaje (Id): 5.3 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 2.33 nS

Conductancia de drenaje-sustrato (Cd): 90 pF

Resistencia drenaje-fuente RDS(on): 0.0645 Ohm

Empaquetado / Estuche: SOT23

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AO3407 Datasheet (PDF)

1.1. ao3407g.pdf Size:276K _update

AO3407
AO3407

AO3407G P-CHANNEL MOSFET/P 沟道 MOS 晶体管 用途: 适用于作负载开关或脉宽调制应用。 Purpose:This device is suitable for use as a load switch or in PWM applications. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V -30 V DS I (T =25℃) -4.1 A D a I (T =70℃) -3.5 A D a I -20 A DM V ±20 V GS P (

1.2. ao3407.pdf Size:1986K _htsemi

AO3407
AO3407

AO3407 30V P-Channel Enhancement Mode MOSFET V = -30V DS R , V ? DS(ON) gs@-10V, I 4.1A < 64.5m ds@ R , V DS(ON) gs@-4.5V, I ds@-3.0A < 87m ? Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions D SOT-23-3L G S Millimeter Millimeter REF. REF. Min. Max. Min. Max. A 2.70 3.10 G 1.90 REF. B 2.65 2.95

1.3. ao3407a.pdf Size:484K _aosemi

AO3407
AO3407

AO3407A 30V P-Channel MOSFET General Description Product Summary VDS -30V The AO3407A uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This ID (at VGS=-10V) -4.3A device is suitable for use as a load switch or in PWM RDS(ON) (at VGS=-10V) < 48mΩ applications. RDS(ON) (at VGS =-4.5V) < 78mΩ SOT23 SOT23 D D Top View Bottom View Top View B

1.4. ao3407.pdf Size:447K _aosemi

AO3407
AO3407

AO3407 30V P-Channel MOSFET General Description Product Summary VDS -30V The AO3407 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is ID (at VGS=10V) -4.1A suitable for use as a load switch or in PWM applications. RDS(ON) (at VGS=10V) < 52mΩ RDS(ON) (at VGS = 4.5V) < 87mΩ SOT23 SOT23 D D Top View Bottom View Top View Bottom

1.5. ao3407a-3.pdf Size:2288K _kexin

AO3407
AO3407

SMD Type MOSFET P-Channel MOSFET AO3407A (KO3407A) SOT-23-3 Unit: mm +0.2 2.9 -0.1 +0.1 0.4 -0.1 3 ■ Features ● VDS (V) =-30V ● ID =-4.3 A (VGS =-10V) 1 2 ● RDS(ON) < 48mΩ (VGS =-10V) +0.02 +0.1 0.15 -0.02 0.95-0.1 +0.1 1.9-0.2 ● RDS(ON) < 78mΩ (VGS =-4.5V) 1. Gate 2. Source 3. Drain D D G G S S ■ Absolute Maximum Ratings Ta = 25℃ Paramete

1.6. ao3407a.pdf Size:2287K _kexin

AO3407
AO3407

SMD Type MOSFET P-Channel MOSFET AO3407A (KO3407A) SOT-23 Unit: mm 2.9+0.1 -0.1 +0.1 0.4-0.1 3 ■ Features ● VDS (V) =-30V ● ID =-4.3 A (VGS =-10V) 1 2 +0.1 +0.05 0.95 -0.1 ● RDS(ON) < 48mΩ (VGS =-10V) 0.1 -0.01 +0.1 1.9 -0.1 ● RDS(ON) < 78mΩ (VGS =-4.5V) 1. Gate 2. Source 3. Drain D D G G S S ■ Absolute Maximum Ratings Ta = 25℃ Parameter Sy

1.7. ao3407.pdf Size:1542K _kexin

AO3407
AO3407

SMD Type IC SMD Type MOSFET P-Channel Enhancement MOSFET AO3407 (KO3407) SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 Features 3 VDS (V) = -30V ID = -4.1 A 1 2 RDS(ON) 52m (VGS = -10V) D +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 RDS(ON) 87m (VGS = -4.5V) 1.9 -0.1 1.Base 1. Gate 2.Emitter 2. Source G 3. Drain 3.collector S Absolute Maximum Ratings Ta = 25 Parameter Sy

1.8. ao3407-3.pdf Size:1572K _kexin

AO3407
AO3407

SMD Type IC SMD Type MOSFET P-Channel Enhancement MOSFET AO3407 (KO3407) SOT-23-3 Unit: mm +0.2 2.9-0.1 +0.1 0.4 -0.1 3 Features VDS (V) = -30V ID = -4.1 A 1 2 +0.02 +0.1 0.15 -0.02 RDS(ON) 52m (VGS = -10V) 0.95 -0.1 D 1.9+0.1 -0.2 RDS(ON) 87m (VGS = -4.5V) 1. Gate 2. Source G 3. Drain S Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Sourc

1.9. ao3407hf.pdf Size:1559K _kexin

AO3407
AO3407

SMD Type IC SMD Type MOSFET P-Channel Enhancement MOSFET AO3407 HF (KO3407 HF) SOT-23-3 Unit: mm +0.2 2.9-0.1 +0.1 0.4 -0.1 3 Features VDS (V) = -30V ID = -4.1 A 1 2 +0.02 +0.1 0.15 -0.02 RDS(ON) 52m (VGS = -10V) 0.95 -0.1 D 1.9+0.1 -0.2 RDS(ON) 87m (VGS = -4.5V) 1. Gate 2. Source G 3. Drain S Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-

1.10. ao3407.pdf Size:1220K _shenzhen-tuofeng-semi

AO3407
AO3407

Shenzhen Tuofeng Semiconductor Technology Co., Ltd AO3407 AO3407 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO3407 uses advanced trench technology to VDS (V) = -30V provide excellent RDS(ON) with low gate charge. This ID = -4.1 A (VGS = -10V) device is suitable for use as a load switch or in PWM RDS(ON) < 60mΩ (VGS = -10V) applications. St

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