SMG2326N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SMG2326N
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.25 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
|Id|ⓘ - Corriente continua de drenaje: 2.2 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 6.5 nS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.07 Ohm
Paquete / Cubierta: SC59
Búsqueda de reemplazo de SMG2326N MOSFET
SMG2326N Datasheet (PDF)
smg2326n.pdf

SMG2326N 2.2 A, 20 V, RDS(ON) 70 m N-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION SC-59 These miniature surface mount MOSFETs utilize High Cell Density process. Low RDS(on) assures minimal power loss and conserves energy, making this device ideal for use ALin power management
smg2327p.pdf

SMG2327P -3.6 A, -20 V, RDS(ON) 52 m P-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION SC-59 The miniature surface mount MOSFETs utilize high Acell density process.Low RDS(on) assures minimal power L3loss and conserves energy, making this device ideal for 3use in power man
smg2321p.pdf

SMG2321P -4.1A , -20V , RDS(ON) 79 m P-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SC-59 DESCRIPTION The miniature surface mount MOSFETs utilize Ahigh cell density process. Low RDS(on) assures minimal L3power loss and conserves energy, making this device 3Top View C Bideal for use
smg2325p.pdf

SMG2325P -3.6 A, -20 V, RDS(ON) 55 m P-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free DESCRIPTION SC-59 These miniature surface mount MOSFETs utilize a High Cell Density trench process to provide Low RDS(on) and to ensure ALminimal power loss and heat dissipation. Typical applicati
Otros transistores... SMG2310N , SMG2314N , SMG2314NE , SMG2318N , SMG2319P , SMG2321P , SMG2322N , SMG2325P , STP75NF75 , SMG2327P , SMG2328 , SMG2328NE , SMG2328S , SMG2329P , SMG2330N , SMG2334N , SMG2334NE .
History: IPP200N15N3G | ME2306N-G
History: IPP200N15N3G | ME2306N-G



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