SMG2329P Todos los transistores

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SMG2329P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SMG2329P

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 1.3 W

Tensión drenaje-fuente (Vds): 30 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 2.5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 12 nS

Resistencia drenaje-fuente RDS(on): 0.112 Ohm

Empaquetado / Estuche: SC59

Búsqueda de reemplazo de MOSFET SMG2329P

 

SMG2329P Datasheet (PDF)

1.1. smg2329p.pdf Size:116K _secos

SMG2329P
SMG2329P

SMG2329P -2.5 A, -30 V, RDS(ON) 0.112 ? P-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SC-59 DESCRIPTION The miniature surface mount MOSFETs utilize a high cell density trench process To provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC conve

4.1. smg2328s.pdf Size:350K _secos

SMG2329P
SMG2329P

SMG2328S 1.2A , 100V , RDS(ON) 310 m? ? ? ? N-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free SC-59 DESCRIPTION The SMG2328S utilized advanced processing A L techniques to achieve the lowest possible on-resistance, 3 3 extremely efficient and cost-effectiveness device. The Top View

4.2. smg2321p.pdf Size:548K _secos

SMG2329P
SMG2329P

SMG2321P -4.1A , -20V , RDS(ON) 79 m? P-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SC-59 DESCRIPTION The miniature surface mount MOSFETs utilize A high cell density process. Low RDS(on) assures minimal L 3 power loss and conserves energy, making this device 3 Top View C B ideal for use in p

4.3. smg2322n.pdf Size:561K _secos

SMG2329P
SMG2329P

SMG2322N 2.5A, 30V, RDS(ON) 85 m? N-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION SC-59 These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) A L and to ensure minimal power loss and heat dissipation. 3 3 Top View C B 1 1 2 FEAT

4.4. smg2328ne.pdf Size:116K _secos

SMG2329P
SMG2329P

SMG2328NE 6.3 A, 20 V, RDS(ON) 22 m? N-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SC-59 DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to A L ensure minimal power loss and heat dissipation. Typical 3 3 applications a

4.5. smg2328.pdf Size:540K _secos

SMG2329P
SMG2329P

SMG2328 100V, 250m?, 1.5A N-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A Suffix of “-C” specifies halogen & lead-free DESCRIPTION The SMG2328 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The SMG2328 is universally used for all commercial-ind

4.6. smg2325p.pdf Size:621K _secos

SMG2329P
SMG2329P

SMG2325P -3.6 A, -20 V, RDS(ON) 55 m? P-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION SC-59 These miniature surface mount MOSFETs utilize a High Cell Density trench process to provide Low RDS(on) and to ensure A L minimal power loss and heat dissipation. Typical applications

4.7. smg2327p.pdf Size:489K _secos

SMG2329P
SMG2329P

SMG2327P -3.6 A, -20 V, RDS(ON) 52 m? P-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION SC-59 The miniature surface mount MOSFETs utilize high A cell density process.Low RDS(on) assures minimal power L 3 loss and conserves energy, making this device ideal for 3 use in power manageme

4.8. smg2326n.pdf Size:118K _secos

SMG2329P
SMG2329P

SMG2326N 2.2 A, 20 V, RDS(ON) 70 m? N-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION SC-59 These miniature surface mount MOSFETs utilize High Cell Density process. Low RDS(on) assures minimal power loss and conserves energy, making this device ideal for use A L in power management circ

Otros transistores... SMG2321P , SMG2322N , SMG2325P , SMG2326N , SMG2327P , SMG2328 , SMG2328NE , SMG2328S , IRFP064N , SMG2330N , SMG2334N , SMG2334NE , SMG2336N , SMG2339P , SMG2340N , SMG2340NE , SMG2342N .

 


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