SMG2329P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SMG2329P
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.3 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 2.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 12 nS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.112 Ohm
Paquete / Cubierta: SC59
Búsqueda de reemplazo de SMG2329P MOSFET
SMG2329P Datasheet (PDF)
smg2329p.pdf

SMG2329P -2.5 A, -30 V, RDS(ON) 0.112 P-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SC-59 DESCRIPTION The miniature surface mount MOSFETs utilize a high cell density trench process To provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC
smg2327p.pdf

SMG2327P -3.6 A, -20 V, RDS(ON) 52 m P-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION SC-59 The miniature surface mount MOSFETs utilize high Acell density process.Low RDS(on) assures minimal power L3loss and conserves energy, making this device ideal for 3use in power man
smg2321p.pdf

SMG2321P -4.1A , -20V , RDS(ON) 79 m P-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SC-59 DESCRIPTION The miniature surface mount MOSFETs utilize Ahigh cell density process. Low RDS(on) assures minimal L3power loss and conserves energy, making this device 3Top View C Bideal for use
smg2325p.pdf

SMG2325P -3.6 A, -20 V, RDS(ON) 55 m P-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free DESCRIPTION SC-59 These miniature surface mount MOSFETs utilize a High Cell Density trench process to provide Low RDS(on) and to ensure ALminimal power loss and heat dissipation. Typical applicati
Otros transistores... SMG2321P , SMG2322N , SMG2325P , SMG2326N , SMG2327P , SMG2328 , SMG2328NE , SMG2328S , IRFP260 , SMG2330N , SMG2334N , SMG2334NE , SMG2336N , SMG2339P , SMG2340N , SMG2340NE , SMG2342N .
History: APTC60HM45SCTG | XP152A12C0MR-G | STP200NF03
History: APTC60HM45SCTG | XP152A12C0MR-G | STP200NF03



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