SMG2334N Todos los transistores

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SMG2334N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SMG2334N

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 1.3 W

Tensión drenaje-fuente (Vds): 30 V

Tensión compuerta-fuente (Vgs): 12 V

Corriente continua de drenaje (Id): 3.5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 5 nS

Resistencia drenaje-fuente RDS(on): 0.06 Ohm

Empaquetado / Estuche: SC59

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SMG2334N Datasheet (PDF)

1.1. smg2334n.pdf Size:407K _secos

SMG2334N
SMG2334N

SMG2334N 3.5A, 30V, RDS(ON) 60m? N-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION SC-59 These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and A L to ensure minimal power loss and heat dissipation. 3 3 Top View C B 1 1 2 FEA

1.2. smg2334ne.pdf Size:291K _secos

SMG2334N
SMG2334N

SMG2334NE 3.5A , 30V , RDS(ON) 58 m? N-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SC-59 DESCRIPTION These miniature surface mount MOSFETs utilize a high A cell density trench process to provide low RDS(on) and to L ensure minimal power loss and heat dissipation. 3 3 Top View C B 1 1 2 FE

4.1. smg2336n.pdf Size:68K _secos

SMG2334N
SMG2334N

SMG2336N 2.5 A, 30 V, RDS(ON) 32 m? ? ? ? N-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION SC-59 These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. A L 3 3 Top View C B F

4.2. smg2330n.pdf Size:65K _secos

SMG2334N
SMG2334N

SMG2330N 5.2A, 30V, RDS(ON) 32m? ? ? ? N-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SC-59 DESCRIPTION These miniature surface mount MOSFETs utilize High A Cell Density process. Low RDS(on) assures minimal power L loss and conserves energy, making this device ideal for 3 3 use in power m

4.3. smg2339p.pdf Size:113K _secos

SMG2334N
SMG2334N

SMG2339P -3.6 A, -30 V, RDS(ON) 0.057 ? P-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SC-59 DESCRIPTION The miniature surface mount MOSFETs utilize a high cell density process Low RDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuit

Otros transistores... SMG2325P , SMG2326N , SMG2327P , SMG2328 , SMG2328NE , SMG2328S , SMG2329P , SMG2330N , IRFZ44V , SMG2334NE , SMG2336N , SMG2339P , SMG2340N , SMG2340NE , SMG2342N , SMG2342NE , SMG2343 .

 


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Introduzca al menos 1 números o letras