SMG3400 Todos los transistores

 

SMG3400 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SMG3400
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 1.38 W
   Voltaje máximo drenador - fuente |Vds|: 30 V
   Voltaje máximo fuente - puerta |Vgs|: 12 V
   Corriente continua de drenaje |Id|: 5.8 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tiempo de subida (tr): 4.8 nS
   Conductancia de drenaje-sustrato (Cd): 99 pF
   Resistencia entre drenaje y fuente RDS(on): 0.028 Ohm
   Paquete / Cubierta: SC59

 Búsqueda de reemplazo de MOSFET SMG3400

 

SMG3400 Datasheet (PDF)

 ..1. Size:416K  secos
smg3400.pdf

SMG3400
SMG3400

SMG34005.8A, 30V,RDS(ON) 28mElektronische Bauelemente N-Channel Enhancement Mode Power Mos.FETRoHS Compliant ProductSC-59ADim Min MaxDescription LA 2.70 3.10The SMG3400 uses advanced trench technology to provide*3B 1.40 1.60SBTop Viewexcellent on-resistance extremely efficient and 2 1C 1.00 1.30cost-effectiveness device.D 0.35 0.50The SMG3400 is uni

 8.1. Size:515K  secos
smg3401.pdf

SMG3400
SMG3400

SMG3401-4.2A, -30V,RDS(ON) 50m Elektronische Bauelemente P-Channel Enhancement Mode Power Mos.FETA suffix of "-C" specifies halogen & lead-freeASC-59DescriptionLDim Min MaxThe SMG3401 uses advanced trench technology 3A 2.70 3.10SBTop Viewto provide excellent on-resistance extremely 2 1B 1.40 1.60efficient and cost-effectiveness device. C 1.00 1.30The

 8.2. Size:512K  secos
smg3407.pdf

SMG3400
SMG3400

SMG3407-4.1A, -30V,RDS(ON) 52m Elektronische Bauelemente P-Channel Enhancement Mode Power Mos.FETRoHS Compliant ProductASC-59DescriptionLDim Min MaxThe SMG3407 uses advanced trench technology to 3A 2.70 3.10SBTop Viewprovide excellent on-resistance with low gate change. 2 1B 1.40 1.60The device is suitable for use as a load switch or inC 1.00 1.30PWM

 8.3. Size:407K  secos
smg3403.pdf

SMG3400
SMG3400

SMG3403-3.7A, -30V,RDS(ON) 75m Elektronische Bauelemente P-Channel Enhancement Mode Power Mos.FETRoHS Compliant ProductASC-59DescriptionLDim Min MaxThe SMG3403 provide the designer with the best 3A 2.70 3.10SBTop Viewcombination of fast switching, low on-resistance 2 1B 1.40 1.60and cost-effectiveness. C 1.00 1.30The SMG3403 is universally preferred f

 8.4. Size:819K  secos
smg3402.pdf

SMG3400
SMG3400

SMG3402 N-Ch Enhancement Mode Power MOSFET 4.6 A, 30 V, RDS(ON), 30 m Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTIONS & FEATURES The SMG3402 uses advanced trench technology to provide excellent on-resistance. The device is suitable for use as a load switch or in PWM applications. Lower On-resistance SC-

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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