SMG3401 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SMG3401
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.38 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 4.2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1.3 V
   Qgⓘ - Carga de la puerta: 9.4 nC
   trⓘ - Tiempo de subida: 3.2 nS
   Cossⓘ - Capacitancia de salida: 115 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.05 Ohm
   Paquete / Cubierta: SC59

Búsqueda de reemplazo de MOSFET SMG3401

SMG3401 Datasheet (PDF)

..1. Size:515K secos
smg3401.pdf

SMG3401-4.2A, -30V,RDS(ON) 50m Elektronische Bauelemente P-Channel Enhancement Mode Power Mos.FETA suffix of "-C" specifies halogen & lead-freeASC-59DescriptionLDim Min MaxThe SMG3401 uses advanced trench technology 3A 2.70 3.10SBTop Viewto provide excellent on-resistance extremely 2 1B 1.40 1.60efficient and cost-effectiveness device. C 1.00 1.30The

8.1. Size:416K secos
smg3400.pdf

SMG34005.8A, 30V,RDS(ON) 28mElektronische Bauelemente N-Channel Enhancement Mode Power Mos.FETRoHS Compliant ProductSC-59ADim Min MaxDescription LA 2.70 3.10The SMG3400 uses advanced trench technology to provide*3B 1.40 1.60SBTop Viewexcellent on-resistance extremely efficient and 2 1C 1.00 1.30cost-effectiveness device.D 0.35 0.50The SMG3400 is uni

8.2. Size:512K secos
smg3407.pdf

SMG3407-4.1A, -30V,RDS(ON) 52m Elektronische Bauelemente P-Channel Enhancement Mode Power Mos.FETRoHS Compliant ProductASC-59DescriptionLDim Min MaxThe SMG3407 uses advanced trench technology to 3A 2.70 3.10SBTop Viewprovide excellent on-resistance with low gate change. 2 1B 1.40 1.60The device is suitable for use as a load switch or inC 1.00 1.30PWM

8.3. Size:407K secos
smg3403.pdf

SMG3403-3.7A, -30V,RDS(ON) 75m Elektronische Bauelemente P-Channel Enhancement Mode Power Mos.FETRoHS Compliant ProductASC-59DescriptionLDim Min MaxThe SMG3403 provide the designer with the best 3A 2.70 3.10SBTop Viewcombination of fast switching, low on-resistance 2 1B 1.40 1.60and cost-effectiveness. C 1.00 1.30The SMG3403 is universally preferred f

8.4. Size:819K secos
smg3402.pdf

SMG3402 N-Ch Enhancement Mode Power MOSFET 4.6 A, 30 V, RDS(ON), 30 m Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTIONS & FEATURES The SMG3402 uses advanced trench technology to provide excellent on-resistance. The device is suitable for use as a load switch or in PWM applications. Lower On-resistance SC-

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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