SSD40N03 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SSD40N03
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 50 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 36 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 60 nS
Cossⓘ - Capacitancia de salida: 380 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.021 Ohm
Paquete / Cubierta: TO252
Búsqueda de reemplazo de SSD40N03 MOSFET
SSD40N03 Datasheet (PDF)
ssd40n03.pdf

SSD40N0336A, 30V,RDS(ON)21m Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FETRoHS Compliant ProductDescriptionTO-252The SSD40N03 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 is universally preferred for all commercial-industrial surface mount applications
ssd40n04-20d.pdf

SSD40N04-20D N-Ch Enhancement Mode Power MOSFET 39A, 40V, RDS(ON) 22m Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen free TO-252(D-Pack)DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density process. Low RDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power manageme
ssd40n10-30d.pdf

SSD40N10-30D 26A, 100V, RDS(ON) 36m N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen free FEATURES TO-252(D-Pack) Low RDS(on) trench technology. Low thermal impedance. Fast switching speed. APPLICATION PoE Power Sourcing Equipment. ACB PoE Powered Devices. D Telecom DC/DC converte
ssd40p04-20d.pdf

SSD40P04-20D P-Ch Enhancement Mode Power MOSFET -36A, -40V, RDS(ON) 30m Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen free DESCRIPTION These miniature surface mount MOSFETs utilize high cell density process. TO-252(D-Pack)Low RDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power manageme
Otros transistores... SSD2504 , SSD2504S , SSD3055 , SSD30N03-40D , SSD30N06-39D , SSD30N10-50D , SSD30N10-70D , SSD408 , RU6888R , SSD40N04-20D , SSD40N10-30D , SSD40P04-20D , SSD40P04-20DE , SSD45N03 , SSD50N06-15D , SSD50P03-09D , SSD60N04-12D .
History: CSD19536KTT | SSF1N80G5 | SSF2145CH6 | JMTK10N10A | JMSL0608PGD | JMSL0606AKQ
History: CSD19536KTT | SSF1N80G5 | SSF2145CH6 | JMTK10N10A | JMSL0608PGD | JMSL0606AKQ



Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: MP20N40P | MP18N20 | MP180N06P | MP150N08P | MP11P20 | MLS65R580D | MLS65R380D | MLS60R380D | MDT9N20 | MDT7N65 | MDT70N03 | MDT60NF06D | MDT60N10D | MDT60N06D | MDT5N65 | MPG100N08P
Popular searches
k3502 datasheet | p0903bdg datasheet | 2sa722 | f1010e mosfet datasheet | 2sa566 | bc559 equivalent | c2075 transistor | ecg123