SSF1321P Todos los transistores

 

SSF1321P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SSF1321P

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 0.34 W

Tensión drenaje-fuente (Vds): 20 V

Tensión compuerta-fuente (Vgs): 8 V

Corriente continua de drenaje (Id): 1.7 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 9 nS

Resistencia drenaje-fuente RDS(on): 0.079 Ohm

Empaquetado / Estuche: SOT323

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SSF1321P Datasheet (PDF)

1.1. ssf1321p.pdf Size:448K _secos

SSF1321P
SSF1321P

SSF1321P -1.7A, -20V, RDS(on) 0.079? P-Channel MOSFET Elektronische Bauelemente RoHS Compliant Product A Suffix of “-C” specifies halogen & lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low SOT-323 RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters an

4.1. ssf1320n.pdf Size:393K _secos

SSF1321P
SSF1321P

SSF1320N 2A , 20V , RDS(ON) 58 m? ? ? ? N-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION SOT-323 These miniature surface mount MOSFETs A utilize a high cell density trench process to provide low L 3 RDS(ON) and to ensure minimal power loss and heat dissipation. 3 Top Vie

 5.1. ssf1331p.pdf Size:393K _secos

SSF1321P
SSF1321P

SSF1331P -1.5A, -30V, RDS(on) 0.112? P-Channel MOSFET Elektronische Bauelemente RoHS Compliant Product A Suffix of “-C” specifies halogen & lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a SOT-323 high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters an

5.2. ssf1341.pdf Size:369K _silikron

SSF1321P
SSF1321P

SSF1341 D DESCRIPTION The SSF1341 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable G for use as a load switch or in PWM applications. S Schematic diagram GENERAL FEATURES ● VDS = -12V,ID = -3.5A RDS(ON) <85mΩ @ VGS=-2.5V RDS(ON) <50mΩ @ VGS=-4.5V ● High Power and

 5.3. ssf13n50.pdf Size:510K _silikron

SSF1321P
SSF1321P

 SSF13N50 Main Product Characteristics VDSS 500V RDS(on) 0.39Ω(typ.) ID 13A Marking and Pin TO-220 Schematic Diagram Assignment Features and Benefits:  Advanced Process Technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  150℃ o

5.4. ssf13n50f.pdf Size:533K _silikron

SSF1321P
SSF1321P

 SSF13N50F Main Product Characteristics: VDSS 500V RDS(on) 0.41Ω(typ.) ID 13A Marking a nd p in Sche ma ti c di agr a m TO220F Assignment Features and Benefits:  Advanced Process Technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery

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