SSG4470STM MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SSG4470STM
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.5 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 10 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 VQgⓘ - Carga de la puerta: 9.8 nC
trⓘ - Tiempo de subida: 22 nS
Cossⓘ - Capacitancia de salida: 240 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.01 Ohm
Paquete / Cubierta: SOP8
Búsqueda de reemplazo de MOSFET SSG4470STM
SSG4470STM Datasheet (PDF)
ssg4470stm.pdf
SSG4470STM N-Ch Enhancement Mode Power MOSFET 10 A, 40 V, RDS(ON) 10 m Elektronische Bauelemente FEATURES Super high dense cell design for low RDS(on). SOP-8 Rugged and reliable. Surface Mount Package. BPRODUCT SUMMARY PRODUCT SUMMARY L DVDSS(V) d RDS(on) m(Max ID(A)10@VGS= 10V M40 10 13@VGS= 4.5V A CNKJMARKING H G F EMillime
ssg4462n.pdf
SSG4462N 9.7 A, 60 V, RDS(ON) 22 m N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION These miniature surface mount MOSFETs SOP-8 utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications ar
ssg4499p.pdf
SSG4499P -6.8 A, -60 V, RDS(ON) 45 mP-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION SOP-8 These miniature surface mount MOSFETs utilize a high cell density trench process to Bprovide low RDS(on) and to ensure minimal power loss and heat dissipation. L DMFEATURES
ssg4480n.pdf
SSG4480N 7.1 A, 80 V, RDS(ON) 41 mN-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOP-8 FEATURES Low RDS(on) trench technology. B Low thermal impedance. Fast switching speed. L DAPPLICATIONS M White LED boost converters A C Automotive Systems N I
ssg4435.pdf
SSG4435 -8A, -30V, RDS(ON) 20m P-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOP-8 DESCRIPTION The SSG4435 provide the designer with the best B combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOP-8 package is universal
ssg4410n.pdf
SSG4410N 13 A, 30 V, RDS(ON) 13.5 m N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente DESCRIPTION SOP-8 These miniature surface mount MOSFETs utilize a high cell density trench process to Bprovide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power L Dmanagement in portable and battery-pow
ssg4407p.pdf
SSG4407P -15A, -30V, RDS(ON) 9 m P-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION SOP-8 These miniature surface mount MOSFETs utilize High Cell Density process. Low RDS(on) assures Bminimal power loss and conserves energy, making this device ideal for use
ssg4434n.pdf
SSG4434N 18.6 A, 30 V, RDS(ON) 7 mN-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente DESCRIPTION These miniature surface mount MOSFETs SOP-8 utilize a high cell density trench process to Bprovide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered L
ssg4492n.pdf
SSG4492N 9A, 100V, RDS(ON) 26m N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOP-8 DESCRIPTION These miniature surface mount MOSFETs Butilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. L DMFEATURES L
ssg4402n.pdf
SSG4402N 6.7 A, 60 V, RDS(ON) 38 m N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION These miniature surface mount MOSFETs SOP-8 utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications ar
ssg4490n.pdf
SSG4490N 5.2 A, 100 V, RDS(ON) 78 mN-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente DESCRIPTION These miniature surface mount MOSFETs SOP-8 utilize a high cell density trench process to provide low RDS(on) and to ensure minimal Bpower loss and heat dissipation. Typical applications are DC-DC converters and power management In portable and battery-powered
ssg4436n.pdf
SSG4436N 22A, 30V, RDS(ON) 4.6mN-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION SOP-8 These miniature surface mount MOSFETs utilize a high cell density trench process to Bprovide low RDS(on) and to ensure minimal power loss and heat dissipation. L DFEATURES M
ssg4463p.pdf
SSG4463P P-Ch Enhancement Mode Power MOSFET -13.4A, -20V, RDS(ON) 11.5 m Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOP-8 DESCRIPTION These miniature surface mount MOSFETs Butilize high cell density process. Low RDS(on) assures minimal power loss and conserves energy, making this device ideal for use in L Dp
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
Liste
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