SSG4512CE MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

SSG4512CE N & P-Ch Enhancement Mode Power MOSFET N-Ch: 6.9 A, 30 V, RDS(ON) 31 m Elektronische Bauelemente P-Ch: -5.2 A, -30 V, RDS(ON) 52 m RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOP-8 DESCRIPTION These miniature surface mount MOSFETs utilize a Bhigh cell density trench process to provide low RDS(on)

SSG4510 N & P-Ch Enhancement Mode Power MOSFET N-Ch: 2.5 A, 100 V, RDS(ON) 112 m Elektronische Bauelemente P-Ch: -2.5A, -100 V, RDS(ON) 180 m RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOP-8 DESCRIPTION The SSG4510 provide the designer with the best Bcombination of fast switching, ruggedized device design

SSG4503N Channel 6.9A, 30V,RDS(ON) 28m P Channel -6.3A, -30V,RDS(ON) 36m Elektronische Bauelemente Enhancement Mode Power Mos.FETRoHS Compliant ProductSOP-8Description0.190.250.400.90o0.375 REFThe SSG4503 provide the designer with the best combination of fast switching, 6.205.800.25ruggedized device design, low on-resistance and cost-effectiveness.

SSG4536C N-Ch: 7.1A, 30V, RDS(ON) 28 m P-Ch: -6A, -30V, RDS(ON) 39 m Elektronische Bauelemente N & P-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION SOP-8 These miniature surface mount MOSFETs B utilize a high cell density trench process to provide low RDS(on) a

SSG4520H N-Ch: 6.6A, 20V, RDS(ON) 47 mP-Ch: -5.2A, -20V, RDS(ON) 79 mElektronische Bauelemente N & P-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION SOP-8 These miniature surface mount MOSFETs B utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power

SSG4502CE N & P-Ch Enhancement Mode Power MOSFET N-Ch: 10.0 A, 30 V, RDS(ON) 16 m Elektronische Bauelemente P-Ch: -8.5A, -30 V, RDS(ON) 23 m RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOP-8 DESCRIPTION These miniature surface mount MOSFETs utilize a Bhigh cell density trench process to provide low RDS(on)

SSG4542C N-Ch: 8.3 A, 40 V, RDS(ON) 14 mP-Ch: -7.6 A, -40 V, RDS(ON) 28 mElektronische Bauelemente N & P-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION SOP-8 These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal powe

SSG4505N Channel 10A, 30V,RDS(ON) 14m P Channel -8.4A, -30V,RDS(ON) 20m Elektronische Bauelemente Enhancement Mode Power Mos.FETRoHS Compliant ProductSOP-8Description0.190.250.400.90o0.375 REFThe SSG4505 provide the designer with the best combination of fast switching, 6.205.800.25ruggedized device design, low on-resistance and cost-effectiveness. 3.

SSG4501N Channel 7A, 30V,RDS(ON) 28m P Channel -5.3A, -30V,RDS(ON) 50m Elektronische Bauelemente Enhancement Mode Power Mos.FET RoHS Compliant Product SOP-8Description0.190.250.400.90o0.375 REFThe SSG4501 provide the designer with the best combination of fast switching, 6.205.800.25rugged

SSG4502C N-Ch: 10 A, 30 V, RDS(ON) 16 mP-Ch: -8.5 A, -30 V, RDS(ON) 23 mElektronische Bauelemente N & P-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION SOP-8 These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power lo

SSG4530C N-Ch: 5.3A, 30V, RDS(ON) 82 m P-Ch: -5.2A, -30V, RDS(ON) 80 m Elektronische Bauelemente N & P-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION SOP-8 These miniature surface mount MOSFETs B utilize a high cell density trench process to provide low RDS(on)

SSG4543C N-Ch: 6.5 A, 40 V, RDS(ON) 32 mP-Ch: -7.6 A, -40 V, RDS(ON) 30 mElektronische Bauelemente N & P-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION SOP-8 These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal powe