SSG4835P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SSG4835P
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 3.1 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
|Id|ⓘ - Corriente continua de drenaje: 9.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 12 nS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.019 Ohm
Paquete / Cubierta: SOP8
Búsqueda de reemplazo de SSG4835P MOSFET
SSG4835P Datasheet (PDF)
ssg4835p.pdf

SSG4835P -9.5 A, -30 V, RDS(ON) 19 mP-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION These miniature surface mount MOSFETs SOP-8 utilize high cell density process. Low RDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power ma
ssg4874n.pdf

SSG4874N 16.8 A, 30 V, RDS(ON) 9 m N-Channel Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION SOP-8 These miniature surface mount MOSFETs utilize a high cell density trench process to Bprovide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC
ssg4825p.pdf

SSG4825P -11.5 A, 30 V, RDS(ON) 13 m P-Channel Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION SOP-8 These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal Bpower loss and heat dissipation. Typical applications are DC
ssg4890n.pdf

SSG4890N 1.4 A, 150 V, RDS(ON) 700 m Dual-N Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOP-8 DESCRIPTION These miniature surface mount MOSFETs Butilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical L Dapp
Otros transistores... SSG4530C , SSG4536C , SSG4542C , SSG4543C , SSG4639STM , SSG4801 , SSG4825P , SSG4825PE , 4N60 , SSG4841P , SSG4842N , SSG4874N , SSG4890N , SSG4902N , SSG4902NA , SSG4910N , SSG4920N .
History: FHD150N03A | 16N60B | SI4920DY-T1 | IPP100N04S3-03
History: FHD150N03A | 16N60B | SI4920DY-T1 | IPP100N04S3-03



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