SSG4902NA MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SSG4902NA
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 2.1 W
Voltaje máximo drenador - fuente |Vds|: 60 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 6.4 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 1 V
Tiempo de subida (tr): 8 nS
Resistencia entre drenaje y fuente RDS(on): 0.041 Ohm
Paquete / Cubierta: SOP8
Búsqueda de reemplazo de MOSFET SSG4902NA
SSG4902NA Datasheet (PDF)
ssg4902na.pdf
SSG4902NA 6.4 A, 60 V, RDS(ON) 41 m Dual N-Channel Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION SOP-8 These miniature surface mount MOSFETs utilize a high cell density process to provide Low RDS(on) Band to ensure minimal power loss and heat dissipation. Typical applica
ssg4902n.pdf
SSG4902N 6.4 A, 60 V, RDS(ON) 35 m Dual N-Channel Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION SOP-8 These miniature surface mount MOSFETs utilize a high cell density process to provide Low RDS(on) and to ensure minimal power loss and heat dissipation. BTypical applications are DC-DC co
ssg4940n.pdf
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ssg4942n.pdf
SSG4942N Dual N-Channel Mode Power MOSFET 4.4 A, 40 V, RDS(ON) 75 m Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION SOP-8 These miniature surface mount MOSFETs utilize a high cell density trench process to Bprovide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications a
ssg4932n.pdf
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ssg4910n.pdf
SSG4910N 10A , 30V , RDS(ON) 13.5 m Dual-N Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION SOP-8 These miniature surface mount MOSFETs Butilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applicati
ssg4930n.pdf
SSG4930N 5 A, 30 V, RDS(ON) 58 mDual N-Channel Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION SOP-8 These miniature surface mount MOSFETs utilize a high cell density trench process to Bprovide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications a
ssg4934n.pdf
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ssg4940nc.pdf
SSG4940NC 8.3A , 40V , RDS(ON) 23 m Dual-N Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOP-8 DESCRIPTION These miniature surface mount MOSFETs utilize a Bhigh cell density trench process to provide low RDS(ON) and to ensure minimal power loss and heat dissipation. L DMFEATURES
ssg4953p.pdf
SSG4953P -5.2 A, -30 V, RDS(ON) 52 m Dual P-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION SOP-8 These miniature surface mount MOSFETs utilize high cell density process. Low RDS(on) Bassures minimal power loss and conserves energy, making this device ideal for use in po
ssg4990n.pdf
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ssg4920n.pdf
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ssg4953.pdf
SSG4953 -5A, -30V,RDS(ON) 53m Elektronische Bauelemente P-Channel Enhancement Mode Power Mos.FETRoHS Compliant ProductA suffix of "-C" specifies halogen & lead-free SOP-8Description0.190.250.400.90oThe SSG4953 provide the designer with the best Combination of fast switching, 0.375 REFruggedized device design, Ultra low on-resistance and cost-effectiveness. 6.
ssg4935p.pdf
SSG4935P P-Ch Enhancement Mode Power MOSFET -7.8 A, -30 V, RDS(ON) 21 m Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION These miniature surface mount MOSFETs SOP-8 utilize high cell density process. Low RDS(on) assures minimal power loss and conserves Benergy, making this device ideal for use in power m
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