SSP7481P Todos los transistores

 

SSP7481P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SSP7481P
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 80 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 6.7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 13 nS
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.075 Ohm
   Paquete / Cubierta: SOP8PP
     - Selección de transistores por parámetros

 

SSP7481P Datasheet (PDF)

 ..1. Size:162K  secos
ssp7481p.pdf pdf_icon

SSP7481P

SSP7481P -6.7 A, -80 V, RDS(ON) 75 m P-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOP-8PPDESCRIPTION BThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC

 8.1. Size:162K  secos
ssp7480n.pdf pdf_icon

SSP7481P

SSP7480N 12 A, 80 V, RDS(ON) 26 m N-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOP-8PPDESCRIPTION BThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC

 9.1. Size:162K  secos
ssp7464n.pdf pdf_icon

SSP7481P

SSP7464N 6.4 A, 60 V, RDS(ON) 82 m N-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOP-8PPDESCRIPTION BThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-D

 9.2. Size:162K  secos
ssp7460n.pdf pdf_icon

SSP7481P

SSP7460N 12 A, 60 V, RDS(ON) 26 m N-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOP-8PPDESCRIPTION BThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC

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History: SI2202 | SIHF10N40D | P3506DD | RJK0822SPN | FK30SM-5 | SL4813A

 

 
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