STT3423P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: STT3423P
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 2 W
Voltaje máximo drenador - fuente |Vds|: 20 V
Voltaje máximo fuente - puerta |Vgs|: 8 V
Corriente continua de drenaje |Id|: 5.7 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 0.4 V
Carga de la puerta (Qg): 8 nC
Tiempo de subida (tr): 35 nS
Resistencia entre drenaje y fuente RDS(on): 0.042 Ohm
Paquete / Cubierta: TSOP6
Búsqueda de reemplazo de MOSFET STT3423P
STT3423P Datasheet (PDF)
stt3423p.pdf
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stt3434n.pdf
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STT3434N 6 A, 30 V, RDS(ON) 32 m N-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free DESCRIPTION TSOP-6 These miniature surface mount MOSFETs utilize A a high cell density trench process to provide Low RDS(on) ELand to ensure minimal power loss and heat dissipation. 6 5 4 Typical
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stt3458n.pdf
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STT3402N 6.3 A, 30 V, RDS(ON) 27 m N-Channel Enhancement Mode Mos.FET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free DESCRIPTION TSOP-6 These miniature surface mount MOSFETs utilize High Cell Density AE process. Low RDS(on) assures minimal power loss and conserves energy, L making this device ideal for use in powe
stt3470n.pdf
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STT3470N 2.2 A, 100 V, RDS(ON) 280 m N-Channel Enhancement Mode Mos.FET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free DESCRIPTION TSOP-6 These miniature surface mount MOSFETs utilize A a High Cell Density trench process to provide Low RDS(on) ELand to ensure minimal power loss and heat dissipation. 6 5 4 Typ
stt3457p.pdf
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STT3457P -4 A, -30 V, RDS(ON) 60 m P-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free DESCRIPTION TSOP-6 These miniature surface mount MOSFETs utilize A a high cell density trench process to provide Low RDS(on) ELand to ensure minimal power loss and heat dissipation. 6 5 4 Typica
stt3471p.pdf
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STT3471P -2A, -100V, RDS(ON) 350 m P-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free DESCRIPTION TSOP-6 These miniature surface mount MOSFETs utilize Aa high cell density trench process to provide Low RDS(on) ELand to ensure minimal power loss and heat dissipation. 6 5 4FEATURES
stt3463p.pdf
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STT3463P -3 A, -60 V, RDS(ON) 155 m P-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free DESCRIPTION TSOP-6 These miniature surface mount MOSFETs utilize A a high cell density process. Low RDS(on) assures minimal ELpower loss and conserves energy, making this device 6 5 4 ideal
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