STT3998N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: STT3998N
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.15 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 3.7 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 12 nS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.058 Ohm
Paquete / Cubierta: TSOP6
Búsqueda de reemplazo de STT3998N MOSFET
STT3998N Datasheet (PDF)
stt3998n.pdf

STT3998N Dual N-Ch Enhancement Mode Mos.FET 3.7 A, 20 V, RDS(ON) 58 m Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free TSOP-6DESCRIPTION A These miniature surface mount MOSFETs utilize a high cell density EL trench process to provide low RDS(on) and to ensure minimal power 6 5 4 loss and heat dissipation. Typic
stt3922n.pdf

STT3922N 4.1A, 20V, RDS(ON) 47m N-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION TSOP-6 These miniature surface mount MOSFETs utilize a high Acell density trench process to provide low RDS(on) and to ELensure minimal power loss and heat dissipation.
stt3981.pdf

STT3981 -1.6 A, -20 V, RDS(ON) 180 m P-Channel Enhancement Mode Mos.FET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free DESCRIPTION The STT3981 utilized advance processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The STT3981 is universally used for all comme
stt3962ne.pdf

STT3962NE 2.3A , 60V , RDS(ON) 0.153 N-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free DESCRIPTION TSOP-6 These miniature surface mount MOSFETs utilize a high Acell density trench process to provide low RDS(on) and to ELensure minimal power loss and heat dissipation
Otros transistores... STT3520C , STT3585 , STT3599C , STT3810N , STT3922N , STT3962N , STT3962NE , STT3981 , 5N60 , STT4443 , STT6405 , STT6602 , STT6802 , SUM6K1N , SGM0410 , SSD04N65 , SSD20N10-130D .
History: CHM06N5NGP | IRFP341
History: CHM06N5NGP | IRFP341



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