STT3998N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: STT3998N

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 1.15 W

Tensión drenaje-fuente (Vds): 20 V

Tensión compuerta-fuente (Vgs): 12 V

Corriente continua de drenaje (Id): 3.7 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 12 nS

Resistencia drenaje-fuente RDS(on): 0.058 Ohm

Empaquetado / Estuche: TSOP6

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STT3998N Datasheet (PDF)

1.1. stt3998n.pdf Size:163K _secos

STT3998N Dual N-Ch Enhancement Mode Mos.FET 3.7 A, 20 V, RDS(ON) 58 m Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free TSOP-6 DESCRIPTION A These miniature surface mount MOSFETs utilize a high cell density E L trench process to provide low RDS(on) and to ensure minimal power 6 5 4 loss and heat dissipation. Typic

5.1. stt3962ne.pdf Size:99K _secos

STT3962NE 2.3A , 60V , RDS(ON) 0.153 Ω Ω Ω Ω N-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION TSOP-6 These miniature surface mount MOSFETs utilize a high A cell density trench process to provide low RDS(on) and to E L ensure minimal power loss and heat dissipation

5.2. stt3962n.pdf Size:438K _secos

STT3962N N-Channel Enhancement Mode Mos.FET 2.3 A, 60 V, RDS(ON) 0.153  Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION TSOP-6 These miniature surface mount MOSFETs utilize High Cell Density A E process. Low RDS(on) assures minimal power loss and conserves L energy, making this device ideal for use in powe

5.3. stt3922n.pdf Size:100K _secos

STT3922N 4.1A, 20V, RDS(ON) 47mΩ Ω Ω Ω N-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION TSOP-6 These miniature surface mount MOSFETs utilize a high A cell density trench process to provide low RDS(on) and to E L ensure minimal power loss and heat dissipation.

5.4. stt3981.pdf Size:902K _secos

STT3981 -1.6 A, -20 V, RDS(ON) 180 mΩ P-Channel Enhancement Mode Mos.FET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION The STT3981 utilized advance processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The STT3981 is universally used for all comme

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