SSM9575 Todos los transistores

 

SSM9575 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SSM9575
   Código: 9575
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 3 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
   |Id|ⓘ - Corriente continua de drenaje: 4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 V
   Qgⓘ - Carga de la puerta: 18 nC
   trⓘ - Tiempo de subida: 5 nS
   Cossⓘ - Capacitancia de salida: 165 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.09 Ohm
   Paquete / Cubierta: SOT223

 Búsqueda de reemplazo de MOSFET SSM9575

 

SSM9575 Datasheet (PDF)

 ..1. Size:729K  secos
ssm9575.pdf

SSM9575
SSM9575

SSM9575 -4A , -60V , RDS(ON) 90 m P-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen-free DESCRIPTION SOT-223 The SSM9575 provide the designer with the best combination of fast switching, ruggedized device Adesign, low on-resistance and cost-effectiveness. M4FEATURES Top ViewC B1

 0.1. Size:223K  silicon standard
ssm9575m.pdf

SSM9575
SSM9575

SSM9575M/GMP-CHANNEL ENHANCEMENT-MODE POWER MOSFETSimple drive requirement BV -60VDSSDDLow on-resistance R 90mDS(ON)DDFast switching characteristics ID -4AGSSSO-8SDescriptionDAdvanced Power MOSFETs from Silicon Standard provide thedesigner with the best combination of fast switching,Gruggedized device design, low on-resistance and cost-effectiveness.

 9.1. Size:303K  silicon standard
ssm9585gm ssm9585gp.pdf

SSM9575
SSM9575

SSM9585GMP-channel Enhancement-mode Power MOSFETDSimple drive requirement BVDSS -80VLower gate charge RDS(ON) 180mFast switching characteristics I -2.7ADGPb-free; RoHS compliant.SDESCRIPTIONDDAdvanced Power MOSFETs from Silicon Standard provide theDDdesigner with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effe

 9.2. Size:531K  silicon standard
ssm9567gm.pdf

SSM9575
SSM9575

SSM9567GMP-channel Enhancement-mode Power MOSFETPRODUCT SUMMARY DESCRIPTIONThe SSM9567GM acheives fast switching performanceBVDSS -40Vwith low gate charge without a complex drive circuit. ItRDS(ON) 50mis suitable for low voltage applications such as DC/DCconverters and general load-switching circuits.I -6AD The SSM9567GM is supplied in an RoHS-compliantPb-free; RoHS-c

 9.3. Size:244K  silicon standard
ssm95t07gp.pdf

SSM9575
SSM9575

SSM95T07GPN-CHANNEL ENHANCEMENT MODEPOWER MOSFET PRODUCT SUMMARY DBVDSS 75VSimple Drive Requirement RDS(ON) 5mLower On-resistance ID 80AGFast Switching Characteristic RoHS Compliant SDESCRIPTION The advanced power MOSFETs from Silicon Standard Corp. provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance a

 9.4. Size:430K  silicon standard
ssm9510gm.pdf

SSM9575
SSM9575

SSM9510GMN- and P-channel Enhancement-mode Power MOSFETsN-CH BVDSS 30VSimple drive requirement D2D2D2 RDS(ON) 28mLower gate charge D1D1D1D1ID 6.9AFast switching characteristicsG2G2P-CH BVDSS -30VPb-free; RoHS compliant. S2S2 G1SO-8 S1G1RDS(ON) 55mS1 DESCRIPTIONID -5.3AAdvanced Power MOSFETs from Silicon Standard provide theD2D1designer

 9.5. Size:526K  silicon standard
ssm9563m.pdf

SSM9575
SSM9575

SSM9563GMP-channel Enhancement-mode Power MOSFETPRODUCT SUMMARY DESCRIPTIONThe SSM9563GM acheives fast switching performanceBVDSS -40Vwith low gate charge without a complex drive circuit. ItRDS(ON) 40mis suitable for low voltage applications such as DC/DCconverters and general load-switching circuits.I -6AD The SSM9563GM is supplied in an RoHS-compliantPb-free; RoHS-c

 9.6. Size:287K  silicon standard
ssm95t06gp ssm95t06gs.pdf

SSM9575
SSM9575

SSM95T06GP,SN-CHANNEL ENHANCEMENT-MODE POWER MOSFET Low gate-charge BV 60VDSSDSimple drive requirement R 8.5mDS(ON)Fast switching ID 75AGSDescriptionGThe SSM95T06S is in a TO-263 package, which is widely used forDScommercial and industrial surface mount applications, and is well suited TO-263 (S)for low voltage applications such as DC/DC converters. The throug

 9.7. Size:526K  silicon standard
ssm9564gm.pdf

SSM9575
SSM9575

SSM9564GMP-channel Enhancement-mode Power MOSFETPRODUCT SUMMARY DESCRIPTIONThe SSM9564GM acheives fast switching performanceBVDSS -40Vwith low gate charge without a complex drive circuit. ItRDS(ON) 28mis suitable for low voltage applications such as DC/DCconverters and general load-switching circuits.I -7.3AD The SSM9564GM is supplied in an RoHS-compliantPb-free; RoHS

Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: IXTN60N50L2

 

 
Back to Top

 


History: IXTN60N50L2

SSM9575
  SSM9575
  SSM9575
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918

 

 

 
Back to Top