SSM9575 Todos los transistores

 

SSM9575 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SSM9575

Código: 9575

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 3 W

Tensión drenaje-fuente (Vds): 60 V

Tensión compuerta-fuente (Vgs): 25 V

Corriente continua de drenaje (Id): 4 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 5 nS

Conductancia de drenaje-sustrato (Cd): 165 pF

Resistencia drenaje-fuente RDS(on): 0.09 Ohm

Empaquetado / Estuche: SOT223

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SSM9575 Datasheet (PDF)

1.1. ssm9575.pdf Size:729K _secos

SSM9575
SSM9575

SSM9575 -4A , -60V , RDS(ON) 90 m P-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen-free DESCRIPTION SOT-223 The SSM9575 provide the designer with the best combination of fast switching, ruggedized device A design, low on-resistance and cost-effectiveness. M 4 FEATURES Top View C B 1

1.2. ssm9575m.pdf Size:223K _silicon_standard

SSM9575
SSM9575

SSM9575M/GM P-CHANNEL ENHANCEMENT-MODE POWER MOSFET Simple drive requirement BV -60V DSS D D Low on-resistance R 90mΩ DS(ON) D D Fast switching characteristics ID -4A G S S SO-8 S Description D Advanced Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, G ruggedized device design, low on-resistance and cost-effectiveness.

 5.1. ssm9564gm.pdf Size:526K _silicon_standard

SSM9575
SSM9575

SSM9564GM P-channel Enhancement-mode Power MOSFET PRODUCT SUMMARY DESCRIPTION The SSM9564GM acheives fast switching performance BVDSS -40V with low gate charge without a complex drive circuit. It RDS(ON) 28mΩ is suitable for low voltage applications such as DC/DC converters and general load-switching circuits. I -7.3A D The SSM9564GM is supplied in an RoHS-compliant Pb-free; RoHS

5.2. ssm95t06gp ssm95t06gs.pdf Size:287K _silicon_standard

SSM9575
SSM9575

SSM95T06GP,S N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Low gate-charge BV 60V DSS D Simple drive requirement R 8.5mΩ DS(ON) Fast switching ID 75A G S Description G The SSM95T06S is in a TO-263 package, which is widely used for D S commercial and industrial surface mount applications, and is well suited TO-263 (S) for low voltage applications such as DC/DC converters. The throug

 5.3. ssm9563m.pdf Size:526K _silicon_standard

SSM9575
SSM9575

SSM9563GM P-channel Enhancement-mode Power MOSFET PRODUCT SUMMARY DESCRIPTION The SSM9563GM acheives fast switching performance BVDSS -40V with low gate charge without a complex drive circuit. It RDS(ON) 40mΩ is suitable for low voltage applications such as DC/DC converters and general load-switching circuits. I -6A D The SSM9563GM is supplied in an RoHS-compliant Pb-free; RoHS-c

5.4. ssm9567gm.pdf Size:531K _silicon_standard

SSM9575
SSM9575

SSM9567GM P-channel Enhancement-mode Power MOSFET PRODUCT SUMMARY DESCRIPTION The SSM9567GM acheives fast switching performance BVDSS -40V with low gate charge without a complex drive circuit. It RDS(ON) 50mΩ is suitable for low voltage applications such as DC/DC converters and general load-switching circuits. I -6A D The SSM9567GM is supplied in an RoHS-compliant Pb-free; RoHS-c

 5.5. ssm9585gm ssm9585gp.pdf Size:303K _silicon_standard

SSM9575
SSM9575

SSM9585GM P-channel Enhancement-mode Power MOSFET D Simple drive requirement BVDSS -80V Lower gate charge RDS(ON) 180mΩ Fast switching characteristics I -2.7A D G Pb-free; RoHS compliant. S DESCRIPTION D D Advanced Power MOSFETs from Silicon Standard provide the D D designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effe

5.6. ssm9510gm.pdf Size:430K _silicon_standard

SSM9575
SSM9575

SSM9510GM N- and P-channel Enhancement-mode Power MOSFETs N-CH BVDSS 30V Simple drive requirement D2 D2 D2 RDS(ON) 28mΩ Lower gate charge D1 D1 D1 D1 ID 6.9A Fast switching characteristics G2 G2 P-CH BVDSS -30V Pb-free; RoHS compliant. S2 S2 G1 SO-8 S1G1 RDS(ON) 55mΩ S1 DESCRIPTION ID -5.3A Advanced Power MOSFETs from Silicon Standard provide the D2 D1 designer

5.7. ssm95t07gp.pdf Size:244K _silicon_standard

SSM9575
SSM9575

SSM95T07GP N-CHANNEL ENHANCEMENT MODE POWER MOSFET PRODUCT SUMMARY D BVDSS 75V Simple Drive Requirement RDS(ON) 5mΩ Lower On-resistance ID 80A G Fast Switching Characteristic RoHS Compliant S DESCRIPTION The advanced power MOSFETs from Silicon Standard Corp. provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance a

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