4N60F MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

4N60Surface Mount N-Channel Power MOSFETDRAIN CURRENTP b Lead(Pb)-Free4 AMPERESDRAIN SOURCE VOLTAGEDescription:600 VOLTAGEThe WEITRON 4N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high

GOFORD4N60/4N60F600V N-Channel MOSFETGENERAL DESCRIPTIONVDSS RDS(ON) IDThis Power MOSFET is produced usingadvanced planar stripe DMOS technology.600V 2.5 4AThis latest technology has been especiallydesigned to minimize on-state resistance,Have a high rugged avalanchecharacteristics.These devices are well suitedfor high efficiency switched mode powersupplies, active p

N RN-CHANNEL MOSFETJCS4N60B Package MAIN CHARACTERISTICS 4.0 A ID 600 V VDSS RdsonVgs=10V 2.4 13.3nC Qg APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge UPS

November 2014FCH104N60F_F085N-Channel SuperFET II FRFET MOSFET600 V, 37 A, 104 m DFeatures Typical RDS(on) = 91 m at VGS = 10 V, ID = 18.5 A Typical Qg(tot) = 109 nC at VGS = 10V, ID = 18.5 A UIS CapabilityG Qualified to AEC Q101G RoHS CompliantDTO-247SSDescription SuperFET II MOSFET is Fairchild Semiconductors brand-newForcurrentpackagedr

December 2013FCP104N60FN-Channel SuperFET ll FRFET MOSFET600 V, 37 A, 104 mFeatures DescriptionSuperFET II MOSFET is Fairchild Semiconductors brand-new 650 V @ TJ = 150Chigh voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 91 m charge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg = 110 nC

December 2013FCH104N60FN-Channel SuperFET II FRFET MOSFET600 V, 37 A, 104 mFeatures Description 650 V @ TJ = 150C SuperFET II MOSFET is Fairchild Semiconductors brand-newhigh voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 98 mcharge balance technology for outstanding low on-resistanceand lower gate charge performance. This techn

FCH104N60F-F085N-Channel SuperFET II FRFET MOSFET 600 V, 37 A, 104 mDFeatures Typical RDS(on) = 91 m at VGS = 10 V, ID = 18.5 A Typical Qg(tot) = 109 nC at VGS = 10V, ID = 18.5 A UIS CapabilityG Qualified to AEC Q101 RoHS Compliant GDTO-247SSDescription SuperFET II MOSFET is ON Semiconductors brand-new high voltage super-junction (SJ) MOSFET family tha

KF4N60FSEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description CAThis planar stripe MOSFET has better characteristics, such as fastswitching time, low on resistance, low gate charge and excellentavalanche characteristics. It is mainly suitable for electronic ballast andE DIM MILLIMETERSswitching mode power supplies. _A 10.16 0.2+_B 15.8

N RN-CHANNEL MOSFET JCS4N60B Package MAIN CHARACTERISTICS ID 4.0 A VDSS 600 V 2.4 RdsonVgs=10VQg 18.1nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge LED power su

N RN-CHANNEL MOSFET JCS4N60C MAIN CHARACTERISTICS Package ID 4.0 A VDSS 600 V Rdson Typ 2.0 Vgs=10V Max 2.5 Qg-typ 17.5nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED LED power supply

R JCS4N60E JCS4N60E MAIN CHARACTERISTICS Package ID 4.0 A VDSS 600 V Rdson_max 2.35 Vgs=10V Qg-typ 11.8nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED LED power supply FEATURES Low

N lSX:_W:WHe^vfSO{RN-CHANNEL MOSFETJCS4N60 \ Package ;NSpe MAIN CHARACTERISTICS 4.0 A ID 600 V VDSS Rdson 2.5 @Vgs=10V27 nC Qg APPLICATIONS (u High efficiency switch

Spec. No. : C408FP Issued Date : 2008.09.02 CYStech Electronics Corp.Revised Date :2012.11.20 Page No. : 1/ 10 N-Channel Enhancement Mode Power MOSFETBVDSS : 600V RDS(ON) : 2.1(typ.) MTN4N60FP ID : 4A Description The MTN4N60FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-re

Spec. No. : C715FP Issued Date : 2009.09.16 CYStech Electronics Corp.Revised Date : 2011.03.29 Page No. : 1/9 N-Channel Enhancement Mode Power MOSFETBVDSS : 600V RDS(ON) : 0.55(max.) MTN14N60FP ID : 14A Description The MTN14N60FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on

SSF4N60F Main Product Characteristics: VDSS 600V RDS(on) 1.9(typ.) ID 4A Marking and p in TO-220F Schematic diagram Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery

Silicon N-Channel Power MOSFET R CS4N60F A9R General Description VDSS 600 V CS4N60F A9R, the silicon N-channel Enhanced ID 4 A PD(TC=25) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.1 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

Silicon N-Channel Power MOSFET R CS4N60F A9TDY General Description VDSS 600 V CS4N60F A9TDY, the silicon N-channel ID 4 A PD(TC=25) 30 W Enhanced VDMOSFETs, is obtained by the self-aligned RDS(ON)Typ 2.0 planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

Silicon N-Channel Power MOSFET R CS4N60F A9HD General Description VDSS 600 V CS4N60F A9HD, the silicon N-channel Enhanced ID 4 A PD(TC=25) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.8 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p

RCM4N60F www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 600V N-Channel VDMOS RoHS 1 LDE 2 1 23

DIP Type MOSFETN-Channel MOSFETKX4N60FUnit: mmTO-220F0.200.200.202.540.200.70 Features VDS (V) = 600V ID = 2.4 A (VGS = 10V) RDS(ON) 2.5 (VGS = 10V)0.202.76D1.47max0.200.501 2 3G0.200.802.54typ2.54typS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 600V

SVF4N60D/F/T/M 4A600V N SVF4N60D/F/T/M N MOS F-CellTM VDMOS

SVSP14N60F(FJD)(T)D2 14A, 600V MOS 2 SVSP14N60F(FJD)(T)D2 N MOSFET 1 MOS 31. 2. 3.SVSP14N60F(FJD)(T)D2

SVSP24N60FJD(T)D2 24A600V MOS 2SVSP24N60FJD(T)D2 N MOSFET 1 MOS 3. 1. 2. 3.SVSP24N60FJD(T)D2

SVS14N60F(FJ)(T)D2 14A, 600V MOS 2 SVS14N60F(FJ)(T)D2 N MOSFET 1 MOS 3SVS14N60F(FJ)(T)D2 /

SVF4N60D/F/T/M 4A600V N 2SVF4N60D/F/T/M N MOS F-CellTM VDMOS 113TO-252-2L3

CS4N60FA9HD600V Silicon N-Channel Power MOSFET Features Outline Fast switching. TO-220F ESD improved capability.0.189(4.80)0.173(4.40) Low gate charge.0.409(10.40)0.378(9.60) 0.114(2.90) Low reverse transfer capacitances.0.098(2.50) 100% single pulse avalanche energy test.0.638(16.20)0.606(15.40)Marking code Mechanical dataG D S Ep

BRF4N60(CS4N60F) N-CHANNEL MOSFET/N MOS : DC/DC Purpose: These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. : ,, Features: Low gate charge, low crss, fast switching. /Absolute maximum ratings(Ta=25

Oct 2016HFP4N60F / HFS4N60F600V N-Channel MOSFETFeatures Key ParametersParameter Value Unit Originative New DesignBVDSS 600 V Very Low Intrinsic CapacitancesID 4A Excellent Switching CharacteristicsRDS(on), Typ 2.6 100% Avalanche TestedQg, Typ 8.5 nC RoHS CompliantHFP4N60F HFS4N60FSymbolTO-220 TO-220FSSDDGGAbsolute Maximum Ratings TC=25 unles

Oct 2016HFS4N60FS600V N-Channel MOSFETFeatures Key ParametersParameter Value Unit Originative New DesignBVDSS 600 V Very Low Intrinsic CapacitancesID 4A Excellent Switching CharacteristicsRDS(on), Typ 2.6 100% Avalanche TestedQg, Typ 8.5 nC Single Gauge PackageTO-220FS SymbolSDGAbsolute Maximum Ratings TC=25 unless otherwise specifiedSymbol Parameter

QM04N60F 1 2011-11-15 - 1 -N-Ch 600V Fast Switching MOSFETsGeneral Description Product SummeryThe QM04N60F is the highest performance N-ch MOSFETs with extreme high cell density , which BVDSS RDSON ID provide excellent RDSON and gate charge for 600V 2.0 4Amost of the synchronous buck converterapplications . Applications The QM04N60F meet the RoHS and G

Silicon N-Channel Power MOSFET R CS4N60F A9TDY General Description VDSS 600 V CS4N60F A9TDY, the silicon N-channel ID 4 A PD(TC=25) 30 W Enhanced VDMOSFETs, is obtained by the self-aligned RDS(ON)Typ 2.0 planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

Silicon N-Channel Power MOSFET R CS4N60F A9R General Description VDSS 600 V CS4N60F A9R, the silicon N-channel Enhanced ID 4 A PD(TC=25) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.1 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

nvertSuzhou Convert Semiconductor Co ., Ltd.CS4N60F,CS4N60P,CS4N60U,CS4N60D600V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS4N60F TO-220F

CSFR4N60F,CSFR4N60PnvertSuzhou Convert Semiconductor Co ., Ltd.CSFR4N60U,CSFR4N60D600V N-Channel MOSFETFEATURES Fast switching Integrate fast recovery diode Fast switching speed 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Ma

FIR4N60FGAdvanced N-Ch Power MOSFETPIN Connection TO-220FGeneral Description FIR4N60FG is an N-channel enhancement mode powerMOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. Theimproved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior

HM4N60 / HM4N60FHM4N60 / HM4N60F600V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using SL semis 4.5A, 600V, RDS(on) = 2.50 @VGS = 10 Vadvanced planar stripe DMOS technology. Low gate charge ( typical 16nC)This advanced technology has been especially tailored to High ruggednessminimize on-state resistance, provide superior switching

4N60 SeriesN-Channel MOSFET4A, 600V, N H FQP4N60C H4N60P P: TO-220ABHAOHAI 50Pcs 1000Pcs 5000Pcs4N60FQPF4N60C H4N60F F: TO-220FP4N60 Series Pin AssignmentID=4AAPPLICATIONELECTRONIC BALLAST

INCHANGE Semiconductorisc N-Channel MOSFET Transistor FCP104N60FFEATURESStatic drain-source on-resistance:RDS(on) 104mFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONLightingAC-DC Power SupplyABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Dra