4N60F MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

4N60F MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 4N60F

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 33 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 4 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 19 nS

Cossⓘ - Capacitancia de salida: 66 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 2.5 Ohm

Encapsulados: TO220F

Búsqueda de reemplazo de 4N60F MOSFET

- Selecciónⓘ de transistores por parámetros

4N60F datasheet

..1. Size:794K wietron
4n60d 4n60f 4n60i 4n60p.pdf pdf_icon

4N60 Surface Mount N-Channel Power MOSFET DRAIN CURRENT P b Lead(Pb)-Free 4 AMPERES DRAIN SOURCE VOLTAGE Description 600 VOLTAGE The WEITRON 4N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high

..2. Size:2598K goford
4n60 4n60f.pdf pdf_icon

GOFORD 4N60/4N60F 600V N-Channel MOSFET GENERAL DESCRIPTION VDSS RDS(ON) ID This Power MOSFET is produced using advanced planar stripe DMOS technology. 600V 2.5 4A This latest technology has been especially designed to minimize on-state resistance, Have a high rugged avalanche characteristics.These devices are well suited for high efficiency switched mode power supplies, active p

..3. Size:934K chongqing pingwei
4n60 4n60f 4n60b 4n60h 4n60g 4n60d.pdf pdf_icon

0.1. Size:1019K 1
jcs4n60vb jcs4n60rb jcs4n60bb jcs4n60cb jcs4n60fb.pdf pdf_icon

N R N-CHANNEL MOSFET JCS4N60B Package MAIN CHARACTERISTICS 4.0 A ID 600 V VDSS Rdson Vgs=10V 2.4 13.3nC Qg APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge UPS

0.2. Size:629K fairchild semi
fch104n60f f085.pdf pdf_icon

November 2014 FCH104N60F_F085 N-Channel SuperFET II FRFET MOSFET 600 V, 37 A, 104 m D Features Typical RDS(on) = 91 m at VGS = 10 V, ID = 18.5 A Typical Qg(tot) = 109 nC at VGS = 10V, ID = 18.5 A UIS Capability G Qualified to AEC Q101 G RoHS Compliant D TO-247 S S Description SuperFET II MOSFET is Fairchild Semiconductor s brand-new For current package dr

0.3. Size:652K fairchild semi
fcp104n60f.pdf pdf_icon

December 2013 FCP104N60F N-Channel SuperFET ll FRFET MOSFET 600 V, 37 A, 104 m Features Description SuperFET II MOSFET is Fairchild Semiconductor s brand-new 650 V @ TJ = 150 C high voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 91 m charge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg = 110 nC

0.4. Size:573K fairchild semi
fch104n60f.pdf pdf_icon

December 2013 FCH104N60F N-Channel SuperFET II FRFET MOSFET 600 V, 37 A, 104 m Features Description 650 V @ TJ = 150 C SuperFET II MOSFET is Fairchild Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 98 m charge balance technology for outstanding low on-resistance and lower gate charge performance. This techn

0.5. Size:998K onsemi
fch104n60f-f085.pdf pdf_icon

FCH104N60F-F085 N-Channel SuperFET II FRFET MOSFET 600 V, 37 A, 104 m D Features Typical RDS(on) = 91 m at VGS = 10 V, ID = 18.5 A Typical Qg(tot) = 109 nC at VGS = 10V, ID = 18.5 A UIS Capability G Qualified to AEC Q101 RoHS Compliant G D TO-247 S S Description SuperFET II MOSFET is ON Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family tha

0.6. Size:382K kec
kf4n60f.pdf pdf_icon

KF4N60F SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description C A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and E DIM MILLIMETERS switching mode power supplies. _ A 10.16 0.2 + _ B 15.8

0.7. Size:1045K jilin sino
jcs4n60vb jcs4n60rb jcs4n60bb jcs4n60sb jcs4n60cb jcs4n60fb.pdf pdf_icon

N R N-CHANNEL MOSFET JCS4N60B Package MAIN CHARACTERISTICS ID 4.0 A VDSS 600 V 2.4 Rdson Vgs=10V Qg 18.1nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge LED power su

0.8. Size:1304K jilin sino
jcs4n60v jcs4n60c jcs4n60f jcs4n60r jcs4n60b.pdf pdf_icon

0.9. Size:1259K jilin sino
jcs4n60f jcs4n60f jcs4n60v jcs4n60r jcs4n60b.pdf pdf_icon

R JCS4N60E JCS4N60E MAIN CHARACTERISTICS Package ID 4.0 A VDSS 600 V Rdson_max 2.35 Vgs=10V Qg-typ 11.8nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED LED power supply FEATURES Low

0.10. Size:948K jilin sino
jcs4n60f.pdf pdf_icon

0.11. Size:286K cystek
mtn4n60fp.pdf pdf_icon

Spec. No. C408FP Issued Date 2008.09.02 CYStech Electronics Corp. Revised Date 2012.11.20 Page No. 1/ 10 N-Channel Enhancement Mode Power MOSFET BVDSS 600V RDS(ON) 2.1 (typ.) MTN4N60FP ID 4A Description The MTN4N60FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-re

0.12. Size:338K cystek
mtn14n60fp.pdf pdf_icon

Spec. No. C715FP Issued Date 2009.09.16 CYStech Electronics Corp. Revised Date 2011.03.29 Page No. 1/9 N-Channel Enhancement Mode Power MOSFET BVDSS 600V RDS(ON) 0.55 (max.) MTN14N60FP ID 14A Description The MTN14N60FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on

0.13. Size:524K silikron
ssf4n60f.pdf pdf_icon

SSF4N60F Main Product Characteristics VDSS 600V RDS(on) 1.9 (typ.) ID 4A Marking and p in TO-220F Schematic diagram Assignment Features and Benefits Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery

0.14. Size:264K crhj
cs4n60f a9r.pdf pdf_icon

Silicon N-Channel Power MOSFET R CS4N60F A9R General Description VDSS 600 V CS4N60F A9R, the silicon N-channel Enhanced ID 4 A PD(TC=25 ) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.1 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

0.15. Size:344K crhj
cs4n60f a9tdy.pdf pdf_icon

Silicon N-Channel Power MOSFET R CS4N60F A9TDY General Description VDSS 600 V CS4N60F A9TDY, the silicon N-channel ID 4 A PD(TC=25 ) 30 W Enhanced VDMOSFETs, is obtained by the self-aligned RDS(ON)Typ 2.0 planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

0.16. Size:343K crhj
cs4n60f a9hd.pdf pdf_icon

Silicon N-Channel Power MOSFET R CS4N60F A9HD General Description VDSS 600 V CS4N60F A9HD, the silicon N-channel Enhanced ID 4 A PD(TC=25 ) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.8 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p

0.17. Size:128K jdsemi
cm4n60f.pdf pdf_icon

0.18. Size:1765K kexin
kx4n60f.pdf pdf_icon

DIP Type MOSFET N-Channel MOSFET KX4N60F Unit mm TO-220F 0.20 0.20 0.20 2.54 0.20 0.70 Features VDS (V) = 600V ID = 2.4 A (VGS = 10V) RDS(ON) 2.5 (VGS = 10V) 0.20 2.76 D 1.47max 0.20 0.50 1 2 3 G 0.20 0.80 2.54typ 2.54typ S Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 600 V

0.19. Size:800K silan
svf4n60d svf4n60f svf4n60t svf4n60m.pdf pdf_icon

0.20. Size:364K silan
svsp14n60td2 svsp14n60fjdd2 svsp14n60fd2.pdf pdf_icon

0.21. Size:377K silan
svsp24n60fjdd2 svsp24n60td2.pdf pdf_icon

0.22. Size:358K silan
svs14n60td2 svs14n60fjd2 svs14n60fd2.pdf pdf_icon

0.23. Size:479K silan
svf4n60f svf4n60t svf4n60dtr svf4n60m.pdf pdf_icon

0.24. Size:2765K citcorp
cs4n60fa9hd.pdf pdf_icon

CS4N60FA9HD 600V Silicon N-Channel Power MOSFET Features Outline Fast switching. TO-220F ESD improved capability. 0.189(4.80) 0.173(4.40) Low gate charge. 0.409(10.40) 0.378(9.60) 0.114(2.90) Low reverse transfer capacitances. 0.098(2.50) 100% single pulse avalanche energy test. 0.638(16.20) 0.606(15.40) Marking code Mechanical data G D S Ep

0.25. Size:170K lzg
cs4n60f.pdf pdf_icon

BRF4N60(CS4N60F) N-CHANNEL MOSFET/N MOS DC/DC Purpose These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. , , Features Low gate charge, low crss, fast switching. /Absolute maximum ratings(Ta=25

0.26. Size:406K semihow
hfp4n60f hfs4n60f.pdf pdf_icon

Oct 2016 HFP4N60F / HFS4N60F 600V N-Channel MOSFET Features Key Parameters Parameter Value Unit Originative New Design BVDSS 600 V Very Low Intrinsic Capacitances ID 4A Excellent Switching Characteristics RDS(on), Typ 2.6 100% Avalanche Tested Qg, Typ 8.5 nC RoHS Compliant HFP4N60F HFS4N60F Symbol TO-220 TO-220F S S D D G G Absolute Maximum Ratings TC=25 unles

0.27. Size:369K semihow
hfs4n60fs.pdf pdf_icon

Oct 2016 HFS4N60FS 600V N-Channel MOSFET Features Key Parameters Parameter Value Unit Originative New Design BVDSS 600 V Very Low Intrinsic Capacitances ID 4A Excellent Switching Characteristics RDS(on), Typ 2.6 100% Avalanche Tested Qg, Typ 8.5 nC Single Gauge Package TO-220FS Symbol S D G Absolute Maximum Ratings TC=25 unless otherwise specified Symbol Parameter

0.28. Size:321K ubiq
qm04n60f.pdf pdf_icon

QM04N60F 1 2011-11-15 - 1 - N-Ch 600V Fast Switching MOSFETs General Description Product Summery The QM04N60F is the highest performance N-ch MOSFETs with extreme high cell density , which BVDSS RDSON ID provide excellent RDSON and gate charge for 600V 2.0 4A most of the synchronous buck converter applications . Applications The QM04N60F meet the RoHS and G

0.29. Size:344K wuxi china
cs4n60fa9tdy.pdf pdf_icon

0.30. Size:315K wuxi china
cs4n60fa9r.pdf pdf_icon

0.31. Size:704K convert
cs4n60f cs4n60p cs4n60u cs4n60d.pdf pdf_icon

nvert Suzhou Convert Semiconductor Co ., Ltd. CS4N60F,CS4N60P,CS4N60U,CS4N60D 600V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking CS4N60F TO-220F

0.32. Size:702K convert
csfr4n60f csfr4n60p csfr4n60u csfr4n60d.pdf pdf_icon

CSFR4N60F,CSFR4N60P nvert Suzhou Convert Semiconductor Co ., Ltd. CSFR4N60U,CSFR4N60D 600V N-Channel MOSFET FEATURES Fast switching Integrate fast recovery diode Fast switching speed 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Ma

0.33. Size:2125K first semi
fir4n60fg.pdf pdf_icon

FIR4N60FG Advanced N-Ch Power MOSFET PIN Connection TO-220F General Description FIR4N60FG is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior

0.34. Size:460K cn hmsemi
hm4n60 hm4n60f.pdf pdf_icon

HM4N60 / HM4N60F HM4N60 / HM4N60F 600V N-Channel MOSFET General Description Features This Power MOSFET is produced using SL semi s 4.5A, 600V, RDS(on) = 2.50 @VGS = 10 V advanced planar stripe DMOS technology. Low gate charge ( typical 16nC) This advanced technology has been especially tailored to High ruggedness minimize on-state resistance, provide superior switching

0.35. Size:477K cn haohai electr
h4n60p h4n60f.pdf pdf_icon

4N60 Series N-Channel MOSFET 4A, 600V, N H FQP4N60C H4N60P P TO-220AB HAOHAI 50Pcs 1000Pcs 5000Pcs 4N60 FQPF4N60C H4N60F F TO-220FP 4N60 Series Pin Assignment ID=4A APPLICATION ELECTRONIC BALLAST

0.36. Size:227K inchange semiconductor
fcp104n60f.pdf pdf_icon

INCHANGE Semiconductor isc N-Channel MOSFET Transistor FCP104N60F FEATURES Static drain-source on-resistance RDS(on) 104m Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Lighting AC-DC Power Supply ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Dra

Otros transistores... 2N60F , 2N60I , 2N60P , 2N7002KT , 2SK3018W , 2SK3019T , 2SK3541M , 4N60D , TK10A60D , 4N60I , 4N60P , 8N60F , 8N60P , MGSF1P02 , WT4410M , WTC1333 , WTC2301 .