4N60P Todos los transistores

 ..1. Size:794K  wietron
 4n60d 4n60f 4n60i 4n60p.pdf

4N60 Surface Mount N-Channel Power MOSFET DRAIN CURRENT P b Lead(Pb)-Free 4 AMPERES DRAIN SOURCE VOLTAGE Description 600 VOLTAGE The WEITRON 4N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high

 0.1. Size:169K  ixys
 ixfk64n60p ixfx64n60p.pdf

IXFK 64N60P VDSS = 600 V PolarHVTM HiPerFET IXFX 64N60P ID25 = 64 A Power MOSFET RDS(on) 96 m N-Channel Enhancement Mode trr 200 ns Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings TO-264 (IXFK) VDSS TJ = 25 C to 150 C 600 V VDGR TJ = 25 C to 150 C; RGS = 1 M 600 V VGSS Contin

 0.2. Size:148K  ixys
 ixfn64n60p.pdf

VDSS = 600 V IXFN 64N60P PolarHVTM HiPerFET ID25 = 50 A Power MOSFET RDS(on) 96 m trr 200 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode miniBLOC, SOT-227 B (IXFN) E153432 S Symbol Test Conditions Maximum Ratings G VDSS TJ = 25 C to 150 C 600 V VDGR TJ = 25 C to 150 C; RGS = 1 M 600 V S

 0.3. Size:173K  ixys
 ixfa14n60p3 ixfh14n60p3.pdf

Advance Technical Information Polar3 TM HiPerFETTM VDSS = 600V IXFA14N60P3 Power MOSFETs ID25 = 14A IXFP14N60P3 RDS(on) 540m IXFH14N60P3 N-Channel Enhancement Mode TO-263 AA (IXFA) Avalanche Rated Fast Intrinsic Rectifier G S D (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXFP) VDSS TJ = 25 C to 150 C 600 V VDGR TJ = 25 C to 15

 0.4. Size:229K  ixys
 ixfc14n60p.pdf

IXFC 14N60P VDSS = 600 V PolarHVTM HiPerFET ID25 = 8 A Power MOSFET RDS(on) 630 m ISOPLUS220TM trr 200 ns (Electrically Isolated Back Surface) N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings ISOPLUS220TM (IXFC) E153432 VDSS TJ = 25 C to 150 C 600 V VDGR TJ

 0.5. Size:151K  ixys
 ixfr64n60p.pdf

VDSS = 600 V PolarHVTM HiPerFET IXFR 64N60P ID25 = 36 A Power MOSFET RDS(on) 105 m trr 200 ns (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode ISOPLUS247 (IXFR) E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 600 V VDGR TJ = 25 C to 15

 0.6. Size:257K  ixys
 ixfa14n60p ixfh14n60p ixfp14n60p.pdf

IXFA 14N60P VDSS = 600 V PolarHVTM HiPerFET IXFH 14N60P ID25 = 14 A Power MOSFET IXFP 14N60P RDS(on) 550 m N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-263 (IXFA) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 600 V G VDGR TJ = 25 C to 150 C; RGS = 1 M 600 V S (TAB) VGS Continuous 30 V V

 0.7. Size:147K  ixys
 ixta14n60p ixtq14n60p ixtp14n60p.pdf

IXTA 14N60P VDSS = 600 V PolarHVTM IXTP 14N60P ID25 = 14 A Power MOSFET IXTQ 14N60P RDS(on) 550 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25 C to 150 C 600 V VDGR TJ = 25 C to 150 C; RGS = 1 M 600 V G VGS Continuous 30 V S (TAB) VGSM Tranisent 40 V ID25 TC = 25 C14 A

 0.8. Size:180K  ixys
 ixfp14n60p3.pdf

Advance Technical Information Polar3 TM HiPerFETTM VDSS = 600V IXFA14N60P3 Power MOSFETs ID25 = 14A IXFP14N60P3 RDS(on) 540m IXFH14N60P3 N-Channel Enhancement Mode TO-263 AA (IXFA) Avalanche Rated Fast Intrinsic Rectifier G S D (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXFP) VDSS TJ = 25 C to 150 C 600 V VDGR TJ = 25 C to 15

 0.9. Size:163K  ixys
 ixfa4n60p3 ixfp4n60p3 ixfy4n60p3.pdf

Advance Technical Information Polar3 TM HiPerFETTM VDSS = 600V IXFY4N60P3 Power MOSFETs ID25 = 4A IXFA4N60P3 RDS(on) 2.2 IXFP4N60P3 N-Channel Enhancement Mode Avalanche Rated TO-252 (IXFY) Fast Intrinsic Rectifier G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 600 V TO-263 AA (IXFA) VDGR TJ = 25 C to 150 C, RG

 0.10. Size:141K  ixys
 ixta4n60p ixtp4n60p ixtu4n60p ixty4n60p.pdf

IXTA4N60P VDSS = 600 V PolarHVTM IXTP4N60P ID25 = 4 A Power MOSFET IXTU4N60P RDS(on) 2.0 N-Channel Enhancement Mode IXTY4N60P Avalanche Rated TO-263 (IXTA) G S Symbol Test Conditions Maximum Ratings (TAB) VDSS TJ = 25 C to 150 C 600 V VDGR TJ = 25 C to 150 C; RGS = 1 M 600 V TO-220 (IXTP) VGSS Continuous 30 V VGSM Transient 40 V

 0.11. Size:171K  first silicon
 ftk4n60p f d i.pdf

SEMICONDUCTOR FTK4N60P / F / D / I TECHNICAL DATA Power MOSFET 4 Amps, 600 Volt I N-CHANNEL POWER MOSFET 1 TO - 251 D DESCRIPTION 1 TO - 252 The FTK 4N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche P characteristics. This power MOSFET is usua

 0.12. Size:704K  convert
 cs4n60f cs4n60p cs4n60u cs4n60d.pdf

nvert Suzhou Convert Semiconductor Co ., Ltd. CS4N60F,CS4N60P,CS4N60U,CS4N60D 600V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking CS4N60F TO-220F

 0.13. Size:702K  convert
 csfr4n60f csfr4n60p csfr4n60u csfr4n60d.pdf

CSFR4N60F,CSFR4N60P nvert Suzhou Convert Semiconductor Co ., Ltd. CSFR4N60U,CSFR4N60D 600V N-Channel MOSFET FEATURES Fast switching Integrate fast recovery diode Fast switching speed 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Ma

 0.14. Size:477K  cn haohai electr
 h4n60p h4n60f.pdf

4N60 Series N-Channel MOSFET 4A, 600V, N H FQP4N60C H4N60P P TO-220AB HAOHAI 50Pcs 1000Pcs 5000Pcs 4N60 FQPF4N60C H4N60F F TO-220FP 4N60 Series Pin Assignment ID=4A APPLICATION ELECTRONIC BALLAST